位置：首页 > IC中文资料第8404页 > NP88N055NHE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP88N055NHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7600 pF T | NEC 瑞萨 |   | |
NP88N055NHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7600 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | |
NP88N055NHE | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NP88N055NHE | Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
NP88N055NHE | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7600 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7600 pF T | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：294.88 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7600 pF T | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7600 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID | NEC 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：994.67 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | |
NP88N055NHE产品属性
- 类型
描述
- 型号
NP88N055NHE
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
TO-220-2 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
NEC |
2022+ |
TO-220AB |
12888 |
原厂代理 终端免费提供样品 |
|||
NEC |
24+ |
TO-220AB |
8866 |
||||
RENESAS |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
23+ |
TO-262 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEC |
05+ |
原厂原装 |
1374 |
只做全新原装真实现货供应 |
|||
NEC |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
RENESAS/瑞萨 |
22+ |
TO-262 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
NEC |
24+ |
TO220 |
60000 |
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