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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP88N055CLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID | NEC 瑞萨 |   | |
NP88N055CLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID = 44 A) RDS(on)3 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 44 A) • Low input capacitance Ciss = | RENESAS 瑞萨 | | |
NP88N055CLE | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID = 44 A) RDS(on)3 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 44 A) • Low input capacitance Ciss = | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7600 pF T | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7600 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-Channel 60 V (D-S) MOSFET 文件：994.67 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | |
NP88N055CLE产品属性
- 类型
描述
- 型号
NP88N055CLE
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 88A I(D) | TO-220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
22+ |
T0-220 |
3000 |
原装正品,支持实单 |
|||
NEC |
24+ |
NA/ |
5250 |
原装现货,当天可交货,原型号开票 |
|||
VB |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
|||
RENESAS |
1621+ |
TO-263 |
4000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
日本NEC |
1822+ |
TO220 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
25+ |
TO-262TO-263 |
2000 |
全新原装正品支持含税 |
|||
NEC |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
NEC |
23+ |
TO-262-3 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEC |
2025+ |
T0-220 |
3785 |
全新原厂原装产品、公司现货销售 |
|||
NEC |
6000 |
面议 |
19 |
TO-220AB |
NP88N055CLE规格书下载地址
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