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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP88N055MLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID | NEC 瑞萨 |   | |
NP88N055MLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID = 44 A) RDS(on)3 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 44 A) • Low input capacitance Ciss = | RENESAS 瑞萨 | | |
NP88N055MLE | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NP88N055MLE | Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
NP88N055MLE | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID = 44 A) RDS(on)3 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 44 A) • Low input capacitance Ciss = | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7600 pF T | NEC 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7600 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID | NEC 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：994.67 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | |
NP88N055MLE产品属性
- 类型
描述
- 型号
NP88N055MLE
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-220 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
NEC |
05+ |
原厂原装 |
1374 |
只做全新原装真实现货供应 |
|||
NEC |
2450+ |
TO263 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
NEC |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
RENESAS |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
22+ |
TO-220 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
NEC |
6000 |
面议 |
19 |
TO-220AB |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
NEC |
24+ |
TO-220AB |
8866 |
||||
R |
25+ |
TO-TO-220AB |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
NP88N055MLE规格书下载地址
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