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型号	功能描述	生产厂家企业	LOGO
NP84N03KUF	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP84N03KUF is N-channel MOS Field Effect Transistor designed for high current applications. FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss =	RENESAS 瑞萨	RENESAS
NP84N04CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04CHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP84N04CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04CHE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04CHE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04DHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP84N04DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04DHE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04DHE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04EHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP84N04EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04EHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04EHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04EHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04EHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04KHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04KHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04KHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP84N04KHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04KHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04KHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04KHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04MHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04MHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04MHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP84N04MHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04MHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04NHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N04NHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04NHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP84N04NHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF	NEC 瑞萨	NEC
NP84N04NHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 5.2 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4410 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N055CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF	NEC 瑞萨	NEC
NP84N055CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N055CHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP84N055CHE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N055CHE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF	NEC 瑞萨	NEC
NP84N055CLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID =	NEC 瑞萨	NEC
NP84N055CLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID = 42 A) RDS(on)3 = 9.4 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low input capacitance Ciss = 6	RENESAS 瑞萨	RENESAS
NP84N055CLE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP84N055CLE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID = 42 A) RDS(on)3 = 9.4 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low input capacitance Ciss = 6	RENESAS 瑞萨	RENESAS
NP84N055CLE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID =	NEC 瑞萨	NEC
NP84N055DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF	NEC 瑞萨	NEC
NP84N055DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N055DHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP84N055DHE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N055DHE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF	NEC 瑞萨	NEC
NP84N055DLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID =	NEC 瑞萨	NEC
NP84N055DLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID = 42 A) RDS(on)3 = 9.4 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low input capacitance Ciss = 6	RENESAS 瑞萨	RENESAS
NP84N055DLE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP84N055DLE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID = 42 A) RDS(on)3 = 9.4 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low input capacitance Ciss = 6	RENESAS 瑞萨	RENESAS
NP84N055DLE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID =	NEC 瑞萨	NEC
NP84N055EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF	NEC 瑞萨	NEC
NP84N055EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N055EHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP84N055EHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP84N055EHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF	NEC 瑞萨	NEC

NP84产品属性

类型
描述
ID (A)：
84
Nch/Pch：
N
RDS (ON) (mohm) max. @10V or 8V：
3
Automotive：
YES
Application：
Automotive Use
VDSS (V) max.：
30
Series Name：
NP Series

NP84供应商更多...

更新时间：2026-8-4 17:06:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市芯皇电子有限公司	NP80N03KDE	RENESAS/瑞萨	22+	TO-263	9000	专业配单,原装正品假一罚十,代理渠道价格优	询价
深圳市粤骏腾电子科技有限公司	NP80N03	LN	26+	DFN56	78418	原装正品现货供应	询价
深圳市胜彬电子有限公司	NP80N03KDE-E1	NEC	22+	SOT263	3000	原装正品,支持实单	询价
深圳市恒达亿科技有限公司	NP80N03KDE-E1	NEC	25+	SOT-263	4500	全新原装、诚信经营、公司现货销售	询价
深圳市中联芯电子有限公司	NP80N03KLE	VBsemi	25+	TO263	9000	只做原装正品有挂有货假一赔十	询价
深圳市勤思达科技有限公司	NP80N03KLE	VBsemi	24+	TO263	5000	全新原装正品,现货销售	询价
洪芯国际半导体（深圳）有限公司	NP80N03KDE	NEC	26+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市一线半导体有限公司	NP80N03CDE	NEC	24+	TO-220AB	8866		询价
深圳市安富世纪电子有限公司	NP80N03KDE-E1	NEC	23+	SOT-263	8000	只做原装现货	询价
天津市博通航睿技术有限公司	NP80N03KDE-E1	NEC	23+	SOT-263	7000		询价

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DdatasheetPDF页码索引

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NP84芯片相关品牌

NP84规格书下载地址

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NPA-730B-005D

DdatasheetPDF页码索引

NP16N06QLK-E1-AY 瑞智芯只有原装

NP90N04NUK-S18-AY 瑞智芯只有原装