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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP84N04DHE | MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP84N04DHE | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP84N04DHE产品属性
- 类型
描述
- 型号
NP84N04DHE
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
|||
NEC |
23+ |
NA/ |
10000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
23+ |
TO-262 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
NEC |
2022 |
TO-262 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
NEC |
TO-262 |
265209 |
假一罚十原包原标签常备现货! |
||||
NEC |
6000 |
面议 |
19 |
TO-262 |
|||
NEC-日本电气 |
24+25+/26+27+ |
TO-262-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
NEC |
22+ |
TO-262 |
15000 |
原装现货假一赔十 |
|||
NEC |
23+ |
TO-263 |
33500 |
全新原装真实库存含13点增值税票! |
|||
NEC |
08+(pbfree) |
TO-262 |
8866 |
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NP84N04DHE规格书下载地址
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NP84N04DHE数据表相关新闻
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DdatasheetPDF页码索引
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