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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP84N055CLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID = | NEC 瑞萨 |   | |
NP84N055CLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID = 42 A) RDS(on)3 = 9.4 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low input capacitance Ciss = 6 | RENESAS 瑞萨 | | |
NP84N055CLE | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID = 42 A) RDS(on)3 = 9.4 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low input capacitance Ciss = 6 | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID = | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |
NP84N055CLE产品属性
- 类型
描述
- 型号
NP84N055CLE
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
TO-220AB |
8866 |
||||
NEC |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
NEC |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEC ELECTRONICS |
2023+ |
SMD |
906 |
安罗世纪电子只做原装正品货 |
|||
NECELECTRON |
24+ |
原封装 |
906 |
原装现货假一罚十 |
|||
ST/意法 |
23+ |
TO-220F |
69820 |
终端可以免费供样,支持BOM配单! |
|||
VB |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
R |
25+ |
TO-TO-220 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
NEC |
6000 |
面议 |
19 |
TO-220AB |
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NP84N055CLE规格书下载地址
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DdatasheetPDF页码索引
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