MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP80N06MLG, NP80N06NLG, and NP80N06PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFETs-Power MOSFETs for Automotive

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP80N06MLG, NP80N06NLG, and NP80N06PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX

SWITCHING N-CHANNEL POWER MOS FET

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N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

N-Channel 60 V (D-S) MOSFET

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Fast Switching Speed

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N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：1.40473 Mbytes Page：8 Pages