MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Channel Temperature 175 degree rated · Super Low On-state Resistance RDS(on)1 = 13 mW (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mW (MAX.) (VGS = 5 V, ID = 40 A) · Low Ciss : Ciss = 2360 pF (TYP.) · Built-in Gate protection d

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFETs-Power MOSFETs for Automotive

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

N-Channel 60 V (D-S) MOSFET

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Fast Switching Speed

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N-CHANNEL MOSFET in a TO-220 Plastic Package

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