MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 30 A) • High current rating ID(DC) = ±60 A • Low input capacitance Ciss = 5000 pF TYP. • Designed for automotive application and AEC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFETs-Power MOSFETs for Automotive

N-Channel 30-V (D-S) MOSFET

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 30 A) • High current rating ID(DC) = ±60 A • Low input capacitance Ciss = 5000 pF TYP. • Designed for automotive application and AEC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 30 A) • High current rating ID(DC) = ±60 A • Low input capacitance Ciss = 5000 pF TYP. • Designed for automotive application and AEC

SWITCHING N-CHANNEL POWER MOS FET

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N-Channel 30-V (D-S) MOSFET

文件：1.01804 Mbytes Page：8 Pages

SWITCHING N-CHANNEL POWER MOS FET

文件：313.82 Kbytes Page：10 Pages

N-Channel 20-V (D-S)175 C MOSFET

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SWITCHING N-CHANNEL POWER MOS FET

文件：313.82 Kbytes Page：10 Pages

N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm

General Description This device employs advanced MOSFET technology and features low gate charge while maintaining low on resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. F

30V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 60A, 30V. RDS(on)= 0.0135Ω@VGS= 10 V • Low gate charge ( typical 18.5 nC) • Low Crss ( typical 155 pF) • Fa

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package.

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package.

N-Channel Logic Level PWM Optimized Power MOSFET

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