位置：首页 > IC中文资料第11705页 > NP40N10YDF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP40N10YDF | MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on | RENESAS 瑞萨 |   | |
NP40N10YDF | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
NP40N10YDF | Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on | RENESAS 瑞萨 | | ||
100 V ??40 A ??N-channel Power MOS FET Application: Automotive 文件：162.8 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
100 V ??40 A ??N-channel Power MOS FET Application: Automotive 文件：162.8 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
100 V ??40 A ??N-channel Power MOS FET Application: Automotive 文件：162.8 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg | FAIRCHILD 仙童半导体 | | ||
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg | FAIRCHILD 仙童半导体 | | ||
N-Channel Enhancement-Mode Transistor N-Channel Enhancement-Mode Transistor | TEMIC | | ||
TMOS POWER FET 40 AMPERES 100 VOLTS 文件：192.96 Kbytes Page：10 Pages | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM 文件：160.92 Kbytes Page：8 Pages | MOTOROLA 摩托罗拉 | |
NP40N10YDF产品属性
- 类型
描述
- 型号
NP40N10YDF
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
23+ |
SOT23-5 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
24+ |
1951 |
||||||
Renesas(瑞萨) |
24+ |
标准封装 |
12048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
EnerSys |
2022+ |
168 |
全新原装 货期两周 |
||||
EZCHIP |
2026+ |
BGA |
996880 |
只做原装,欢迎来电资询 |
|||
NATLINEAR/南麟 |
24+ |
PDFN5*6-8L-A |
30000 |
专营NATLINEAR南麟原装保障 |
|||
RENESAS/瑞萨 |
22+ |
HSON-8 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
Renesas |
22+ |
8PowerLDFN |
9000 |
原厂渠道,现货配单 |
|||
RENESAS/瑞萨 |
23+ |
HSON-8 |
89630 |
当天发货全新原装现货 |
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