40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-Channel 100-V (D-S) MOSFET

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MOSFET N-CH 100V 40A TO-220AB

N-Channel 100-V (D-S) MOSFET

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40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs

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40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

Fast Switching

FEATURES • Drain Current ID= 40A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) • Fast Switching APPLICATIONS • Switching power supplies,converters, AC and DC motor controls

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

N-Channel 100-V (D-S) MOSFET

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