MOS FIELD EFFECT TRANSISTOR

Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) • Low Ciss: Ciss = 2200 pF TYP. (VDS = 2

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 52mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

MOS FIELD EFFECT TRANSISTOR

Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) • Low Ciss: Ciss = 2200 pF TYP. (VDS = 2

MOS FIELD EFFECT TRANSISTOR

Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) • Low Ciss: Ciss = 2200 pF TYP. (VDS = 2

MOS FIELD EFFECT TRANSISTOR

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个

StarMOST Power MOSFET

文件：201.82 Kbytes Page：2 Pages