型号 功能描述 生产厂家 企业 LOGO 操作

MOS FIELD EFFECT TRANSISTOR

Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ・ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ・ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ・ Designed for automotive application

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.05 mΩ MAX. ( VGS = 10 V, ID = 90 A ) • Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V ) • Designed for automotive applic

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ・ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ・ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ・ Designed for automotive application

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ・ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ・ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ・ Designed for automotive application

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.05 mΩ MAX. ( VGS = 10 V, ID = 90 A ) • Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V ) • Designed for automotive applic

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.05 mΩ MAX. ( VGS = 10 V, ID = 90 A ) • Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V ) • Designed for automotive applic

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ・ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ・ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ・ Designed for automotive application

RENESAS

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:313.28 Kbytes Page:10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:313.28 Kbytes Page:10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:313.28 Kbytes Page:10 Pages

RENESAS

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

文件:220.58 Kbytes Page:8 Pages

RENESAS

瑞萨

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个

ETC

知名厂家

Nch Single Power MOSFET 40V 180A 1.05mohm MP-25ZT/7pin TO-263 Automotive

RENESAS

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

文件:253.03 Kbytes Page:8 Pages

RENESAS

瑞萨

NP180N04产品属性

  • 类型

    描述

  • 型号

    NP180N04

  • 功能描述

    MOSFET N-CH 40V 180A TO-263-7

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-12-28 16:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
800
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
24+
N/A
8000
全新原装正品,现货销售
NEC
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
RENESAS
24+
TO263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESAS/瑞萨
23+
SOT263-7
7000
RENESAS/瑞萨
2447
TO-263-7
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
RENESAS/瑞萨
22+
TO-263-7
20000
公司只做原装 品质保障
Renesas(瑞萨)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
RENESAS
24+
TO-263-7
16900
原装正品现货支持实单
RENESAS/瑞萨
25+
TO-263-7
32360
RENESAS/瑞萨全新特价NP180N04TUK-E1-AY即刻询购立享优惠#长期有货

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