位置：首页 > IC中文资料第11035页 > NP180N04TUK
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP180N04TUK | MOSFIELDEFFECTTRANSISTOR Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10500pFTYP.(VDS=25V) •Designedforautomotiveapplic | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP180N04TUK | MOSFIELDEFFECTTRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP180N04TUK | ProductScoutAutomotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
MOSFIELDEFFECTTRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10500pFTYP.(VDS=25V) •Designedforautomotiveapplic | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10500pFTYP.(VDS=25V) •Designedforautomotiveapplic | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR 文件：253.03 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR Description TheNP180N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=1.5mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ProductScoutAutomotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ProductScoutAutomotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP180N04TUK产品属性
- 类型
描述
- 型号
NP180N04TUK
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
1730+ |
TO263 |
800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
22+ |
MP-25ZT7pinTO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
22+ |
TO-263-7p |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
Renesas(瑞萨) |
21+ |
A/N |
30000 |
专注品牌,只做原装,询价必回!!! |
|||
RENESAS |
2023+ |
TO263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
VBSEMI |
19+ |
TO263 |
29600 |
绝对原装现货,价格优势! |
|||
RENESAS/瑞萨 |
2024+实力库存 |
TO263-7 |
1000 |
只做原厂渠道 可追溯货源 |
|||
NEC |
23+ |
NA/ |
540 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
2023+ |
TO263 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
NEC |
TO-263-7-3 |
265209 |
假一罚十原包原标签常备现货! |
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NP180N04TUK规格书下载地址
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DdatasheetPDF页码索引
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