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NP18价格
参考价格：￥25.1648
型号：NP180N055TUJ-E1-AY 品牌：Renesas 备注：这里有NP18多少钱，2024年最近7天走势，今日出价，今日竞价，NP18批发/采购报价，NP18行情走势销售排行榜，NP18报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=1.5mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=1.5mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=1.5mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10500pFTYP.(VDS=25V) •Designedforautomotiveapplic | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10500pFTYP.(VDS=25V) •Designedforautomotiveapplic | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description NP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.05mMAX.(VGS=10V,ID=90A) ･LowCissCiss=10500pFTYP.(VDS=25V) ･Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.05mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10500pFTYP.(VDS=25V) •Designedforautomotiveapplic | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=2.3mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=2.3mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=2.3mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.40mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.40mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.40mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：THYRISTOR 170V 150A DO214AA 电路保护 TVS - 晶闸管 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
50A, Ultra Low Capacitance TSPD 文件：141.67 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Thyristor Surge Protectors High Voltage Bidirectional 文件：52.51 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：THYRISTOR 170V 50A DO214AA 电路保护 TVS - 晶闸管 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
80A, Ultra Low Capacitance TSPD 文件：135.7 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Thyristor Surge Protectors High Voltage Bidirectional 文件：52.51 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
100A, Ultra Low Capacitance TSPD 文件：139.88 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Thyristor Surge Protectors High Voltage Bidirectional 文件：52.51 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High Current TSPD 文件：135.52 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS 文件：469.37 Kbytes Page：23 Pages | YAGEOYageo Corporation 国巨国巨品牌 |  | | |
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHING N-CHANNEL POWER MOS FET 文件：313.28 Kbytes Page：10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHING N-CHANNEL POWER MOS FET 文件：313.28 Kbytes Page：10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHING N-CHANNEL POWER MOS FET 文件：313.28 Kbytes Page：10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR 文件：220.58 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR 文件：253.03 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR 文件：217.83 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR 文件：123.41 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS 文件：469.37 Kbytes Page：23 Pages | YAGEOYageo Corporation 国巨国巨品牌 | | |
NP18产品属性
- 类型
描述
- 型号
NP18
- 制造商
Hubbell Wiring Device-Kellems
- 功能描述
WALLPLATE, 2-G, 1) DUP 1) TOG, BR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
22+23+ |
11PBF |
74915 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
FAIRCHILD |
SOT-263-7 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
RENESAS |
2018+ |
TO263-7 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
|||
NEC |
23+ |
NA/ |
3850 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
|||
RENESAS/瑞萨 |
TO-263-7 |
265209 |
假一罚十原包原标签常备现货! |
||||
NEC-日本电气 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
VBSEMI |
19+ |
TO263 |
29600 |
绝对原装现货,价格优势! |
|||
Renesas |
23+ |
TO-263-7 |
37650 |
全新原装真实库存含13点增值税票! |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
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公司原装现货
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：NP16N06QLK-E1-AY 类别分立半导体产品晶体管-FET，MOSFET-阵列 制造商RenesasElectronicsAmericaInc 封装：8-PowerL
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DdatasheetPDF页码索引
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