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NP18价格
参考价格：￥25.1648
型号：NP180N055TUJ-E1-AY 品牌：Renesas 备注：这里有NP18多少钱，2025年最近7天走势，今日出价，今日竞价，NP18批发/采购报价，NP18行情走势销售排行榜，NP18报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and | RENESAS 瑞萨 |   | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.05 mΩ MAX. ( VGS = 10 V, ID = 90 A ) • Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V ) • Designed for automotive applic | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ･ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ･ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ･ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.05 mΩ MAX. ( VGS = 10 V, ID = 90 A ) • Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V ) • Designed for automotive applic | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ･ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.05 mΩ MAX. ( VGS = 10 V, ID = 90 A ) • Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V ) • Designed for automotive applic | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.40 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.40 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.40 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati | RENESAS 瑞萨 | | ||
封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：THYRISTOR 170V 150A DO214AA 电路保护 TVS - 晶闸管 | ONSEMI 安森美半导体 | | ||
50A, Ultra Low Capacitance TSPD 文件：141.67 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Thyristor Surge Protectors High Voltage Bidirectional 文件：52.51 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：THYRISTOR 170V 50A DO214AA 电路保护 TVS - 晶闸管 | ONSEMI 安森美半导体 | | ||
80A, Ultra Low Capacitance TSPD 文件：135.7 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Thyristor Surge Protectors High Voltage Bidirectional 文件：52.51 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
100A, Ultra Low Capacitance TSPD 文件：139.88 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Thyristor Surge Protectors High Voltage Bidirectional 文件：52.51 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
High Current TSPD 文件：135.52 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
18V Full-Bridge of MOSFET | natlinear 南麟 | | ||
SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS 文件：469.37 Kbytes Page：23 Pages | YAGEO 国巨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：313.28 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：313.28 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：313.28 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：220.58 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：253.03 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：217.83 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：123.41 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS 文件：469.37 Kbytes Page：23 Pages | YAGEO 国巨 | |
NP18产品属性
- 类型
描述
- 型号
NP18
- 制造商
Hubbell Wiring Device-Kellems
- 功能描述
WALLPLATE, 2-G, 1) DUP 1) TOG, BR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
3850 |
原装现货,当天可交货,原型号开票 |
|||
FAIRCHILD/仙童 |
22+ |
SOT-263-7 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
1730+ |
TO263 |
800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
22+ |
TO-263-7p |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
RENESAS |
25+23+ |
11PBF |
74915 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
2023+ |
TO263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
FAIRCHILD |
SOT-263-7 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
RENESAS/瑞萨 |
24+ |
TO-263-7 |
60000 |
NP18规格书下载地址
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