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NP18价格

参考价格：￥25.1648

型号：NP180N055TUJ-E1-AY 品牌：Renesas 备注：这里有NP18多少钱，2026年最近7天走势，今日出价，今日竞价，NP18批发/采购报价，NP18行情走势销售排行榜，NP18报价。

型号	功能描述	生产厂家企业	LOGO
NP180N04TUG	SWITCHING N-CHANNEL POWER MOS FET • Super low on-state resistance RDS(on) = 1.2 mΩ TYP. / 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • High Current Rating ID(DC) = ±180 A	RENESAS 瑞萨	RENESAS
NP180N04TUG-E1-AY	SWITCHING N-CHANNEL POWER MOS FET • Super low on-state resistance RDS(on) = 1.2 mΩ TYP. / 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • High Current Rating ID(DC) = ±180 A	RENESAS 瑞萨	RENESAS
NP180N04TUG-E2-AY	SWITCHING N-CHANNEL POWER MOS FET • Super low on-state resistance RDS(on) = 1.2 mΩ TYP. / 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • High Current Rating ID(DC) = ±180 A	RENESAS 瑞萨	RENESAS
NP180N04TUJ	MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP180N04TUJ-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP180N04TUJ-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP180N04TUK	MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.05 mΩ MAX. ( VGS = 10 V, ID = 90 A ) • Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V ) • Designed for automotive applic	RENESAS 瑞萨	RENESAS
NP180N04TUK	MOS FIELD EFFECT TRANSISTOR Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ･ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application	RENESAS 瑞萨	RENESAS
NP180N04TUK_V01	MOS FIELD EFFECT TRANSISTOR Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ･ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application	RENESAS 瑞萨	RENESAS
NP180N04TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.05 mΩ MAX. ( VGS = 10 V, ID = 90 A ) • Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V ) • Designed for automotive applic	RENESAS 瑞萨	RENESAS
NP180N04TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ･ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application	RENESAS 瑞萨	RENESAS
NP180N04TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ･ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application	RENESAS 瑞萨	RENESAS
NP180N04TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.05 mΩ MAX. ( VGS = 10 V, ID = 90 A ) • Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V ) • Designed for automotive applic	RENESAS 瑞萨	RENESAS
NP180N055TUJ	MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP180N055TUJ-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP180N055TUJ-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP180N055TUK	MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive application	RENESAS 瑞萨	RENESAS
NP180N055TUK	MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.40 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP180N055TUK_V01	MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive application	RENESAS 瑞萨	RENESAS
NP180N055TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive application	RENESAS 瑞萨	RENESAS
NP180N055TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.40 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP180N055TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive application	RENESAS 瑞萨	RENESAS
NP180N055TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.40 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP1800SAMCT3G	50A, Ultra Low Capacitance TSPD 文件：141.67 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
NP1800SAMCT3G	封装/外壳：DO-214AA，SMB 包装：卷带（TR）描述：THYRISTOR 170V 150A DO214AA 电路保护 TVS - 晶闸管	ONSEMI 安森美半导体	ONSEMI
NP1800SAT3G	封装/外壳：DO-214AA，SMB 包装：卷带（TR）描述：THYRISTOR 170V 50A DO214AA 电路保护 TVS - 晶闸管	ONSEMI 安森美半导体	ONSEMI
NP1800SAT3G	Thyristor Surge Protectors High Voltage Bidirectional 文件：52.51 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
NP1800SBMCT3G	80A, Ultra Low Capacitance TSPD 文件：135.7 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
NP1800SBT3G	Thyristor Surge Protectors High Voltage Bidirectional 文件：52.51 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
NP1800SCMCT3G	100A, Ultra Low Capacitance TSPD 文件：139.88 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
NP1800SCT3G	Thyristor Surge Protectors High Voltage Bidirectional 文件：52.51 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
NP1800SDMCT3G	High Current TSPD 文件：135.52 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
NP1804MR	18V Full-Bridge of MOSFET	NATLINEAR 南麟	NATLINEAR
NP1808	SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS 文件：469.37 Kbytes Page：23 Pages	YAGEO 国巨	YAGEO
NP180N04TUG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP180N04TUG	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP180N04TUG_15	SWITCHING N-CHANNEL POWER MOS FET 文件：313.28 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP180N04TUG-E1-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：313.28 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP180N04TUG-E2-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：313.28 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP180N04TUJ	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP180N04TUJ	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP180N04TUJ_15	MOS FIELD EFFECT TRANSISTOR 文件：220.58 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP180N04TUK	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP180N04TUK_15	MOS FIELD EFFECT TRANSISTOR 文件：253.03 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP180N055TUJ	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP180N055TUJ_15	MOS FIELD EFFECT TRANSISTOR 文件：217.83 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP180N055TUK	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP180N055TUK_15	MOS FIELD EFFECT TRANSISTOR 文件：123.41 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP1812	SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS 文件：469.37 Kbytes Page：23 Pages	YAGEO 国巨	YAGEO

NP18产品属性

类型
描述
可下载：
SPICE
封装类型：
MP-25ZT/7pin TO-263
Nch/Pch：
Nch
通道数：
Single
汽车业：
YES
VDSS (V) 最大值：
40
ID (A)：
180
RDS (ON)(mΩ) 最大值@10V或8V：
1.5
Ciss (pF) 典型值：
17100
Vgs (off) (V) 最大值：
4
VGSS (V)：
20
Pch (W)：
288
应用：
Automotive Use
安装类型：
Surface Mount
系列名称：
NP Series
QG (nC) 典型值：
260

NP18供应商更多...

更新时间：2026-5-14 8:36:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市英科美电子有限公司	NP180N055TUK	RENESAS/瑞萨	2223+	TO-263-7	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳诚思涵科技有限公司	NP18L1616256F-7.5	AMCC	16+	BGA	2500	进口原装现货/价格优势!	询价
深圳市正纳电子有限公司	NP180N055TUK-E1-AY	Renesas(瑞萨)	23+	原厂封装	32078	10年以上分销商,原装进口件,服务型企业	询价
深圳市力拓辉电子有限公司	NP180N055TUK-E1-AY	Renesas	21+		800	只做原装鄙视假货15118075546	询价
深圳市芯皇电子有限公司	NP180N055TUK	RENESAS/瑞萨	22+	TO-263-7p	9000	专业配单,原装正品假一罚十,代理渠道价格优	询价
洪芯国际半导体（深圳）有限公司	NP180N055TUK	NEC	26+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市创新迹电子有限公司	NP180N055TUK	RENESAS/瑞萨	22+	TO-263-7	20000	公司只做原装品质保障	询价
艾睿（深圳）半导体有限公司	NP18L1616256F-7.5	NCP	2447	BGA	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市河锋鑫科技有限公司	NP180N055TUKE1AY	Renesas	22+	TO2637 D2Pak (6 Leads + Tab)	9000	原厂渠道,现货配单	询价
京海半导体(深圳)有限公司	NP180N055TUK	NEC	25+	TO-263-7	10000	原装现货假一罚十	询价

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深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号： NP16N06QLK-E1-AY 类别分立半导体产品晶体管 - FET，MOSFET - 阵列制造商 Renesas Electronics America Inc 封装：8-PowerL
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找IC，尽在114IC

NP18价格

NP18产品属性

NP18供应商更多...

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NP18规格书下载地址

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