型号 功能描述 生产厂家 企业 LOGO 操作

SWITCHING N-CHANNEL POWER MOS FET

FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Features ・ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ・ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ・ Designed for automotive application and AEC-Q101 qualified

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Features ・ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ・ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ・ Designed for automotive application and AEC-Q101 qualified

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Features ・ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ・ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ・ Designed for automotive application and AEC-Q101 qualified

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Features ・ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ・ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ・ Designed for automotive application and AEC-Q101 qualified

RENESAS

瑞萨

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:297.12 Kbytes Page:8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:373.95 Kbytes Page:10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:297.12 Kbytes Page:8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:373.95 Kbytes Page:10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:297.12 Kbytes Page:8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:373.95 Kbytes Page:10 Pages

RENESAS

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:364.65 Kbytes Page:10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:364.65 Kbytes Page:10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:364.65 Kbytes Page:10 Pages

RENESAS

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

文件:203.5 Kbytes Page:8 Pages

RENESAS

瑞萨

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个

ETC

知名厂家

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

文件:235.68 Kbytes Page:8 Pages

RENESAS

瑞萨

OptiMOS3 Power-Transistor

文件:234.66 Kbytes Page:9 Pages

Infineon

英飞凌

NP160N04产品属性

  • 类型

    描述

  • 型号

    NP160N04

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    SWITCHING N-CHANNEL POWER MOS FET

更新时间:2025-12-26 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
22+
SOT-263-7
100000
代理渠道/只做原装/可含税
RENESAS
12+
TO-263
2400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
24+
TO263
880000
明嘉莱只做原装正品现货
NEC
TO263
23+
6000
原装现货有上库存就有货全网最低假一赔万
NEC
25+23+
TO263
37038
绝对原装正品全新进口深圳现货
NEC
TO263
9500
一级代理 原装正品假一罚十价格优势长期供货
RENESAS/瑞萨
22+
TO-263-7p
12500
瑞萨全系列在售,终端可出样品
RENESAS/瑞萨
23+
MP-25ZT7pinTO-263
32687
原厂授权一级代理,专业海外优势订货,价格优势、品种
NEC
24+
TO263
54000
郑重承诺只做原装进口现货
NEC
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔

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