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型号	功能描述	生产厂家企业	LOGO
NP16	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP160N04TDG	SWITCHING N-CHANNEL POWER MOS FET • Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.5 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A • Logic level drive type	RENESAS 瑞萨	RENESAS
NP160N04TDG-E1-AY	SWITCHING N-CHANNEL POWER MOS FET • Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.5 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A • Logic level drive type	RENESAS 瑞萨	RENESAS
NP160N04TDG-E2-AY	SWITCHING N-CHANNEL POWER MOS FET • Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.5 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A • Logic level drive type	RENESAS 瑞萨	RENESAS
NP160N04TUG	SWITCHING N-CHANNEL POWER MOS FET FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A	NEC 瑞萨	NEC
NP160N04TUG-E1-AY	MOS FIELD EFFECT TRANSISTOR FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A	NEC 瑞萨	NEC
NP160N04TUG-E1-AY	SWITCHING N-CHANNEL POWER MOS FET FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A	NEC 瑞萨	NEC
NP160N04TUG-E2-AY	MOS FIELD EFFECT TRANSISTOR FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A	NEC 瑞萨	NEC
NP160N04TUG-E2-AY	SWITCHING N-CHANNEL POWER MOS FET FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A	NEC 瑞萨	NEC
NP160N04TUJ	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli	RENESAS 瑞萨	RENESAS
NP160N04TUJ-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli	RENESAS 瑞萨	RENESAS
NP160N04TUJ-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli	RENESAS 瑞萨	RENESAS
NP160N04TUK	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat	RENESAS 瑞萨	RENESAS
NP160N04TUK	MOS FIELD EFFECT TRANSISTOR Features ･ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ･ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N04TUK_V01	MOS FIELD EFFECT TRANSISTOR Features ･ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ･ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N04TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Features ･ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ･ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N04TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat	RENESAS 瑞萨	RENESAS
NP160N04TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat	RENESAS 瑞萨	RENESAS
NP160N04TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Features ･ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ･ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N055TUJ	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appl	RENESAS 瑞萨	RENESAS
NP160N055TUJ-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appl	RENESAS 瑞萨	RENESAS
NP160N055TUJ-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appl	RENESAS 瑞萨	RENESAS
NP160N055TUK	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N055TUK	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio	RENESAS 瑞萨	RENESAS
NP160N055TUK_V01	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N055TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N055TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio	RENESAS 瑞萨	RENESAS
NP160N055TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N055TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio	RENESAS 瑞萨	RENESAS
NP16AT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16BT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16DT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16GT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16JT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16KT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16MT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16N04YUG	MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP16N04YUG-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP16N04YUG-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP160N04TDG	SWITCHING N-CHANNEL POWER MOS FET 文件：297.12 Kbytes Page：8 Pages	NEC 瑞萨	NEC
NP160N04TDG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP160N04TDG_15	SWITCHING N-CHANNEL POWER MOS FET 文件：373.95 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TDG-E1-AY	SWITCHING N-CHANNEL POWER MOS FET 文件：297.12 Kbytes Page：8 Pages	NEC 瑞萨	NEC
NP160N04TDG-E1-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：373.95 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TDG-E2-AY	SWITCHING N-CHANNEL POWER MOS FET 文件：297.12 Kbytes Page：8 Pages	NEC 瑞萨	NEC
NP160N04TDG-E2-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：373.95 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUG	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP160N04TUG_15	SWITCHING N-CHANNEL POWER MOS FET 文件：364.65 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUG-E1-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：364.65 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUG-E2-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：364.65 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUJ	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUJ	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP160N04TUJ_15	MOS FIELD EFFECT TRANSISTOR 文件：203.5 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUJ-E2-AY	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANSISTOR 分立半导体产品晶体管 - FET，MOSFET - 单个	RENESAS 瑞萨	RENESAS
NP160N04TUK	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP160N04TUK	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUK_15	MOS FIELD EFFECT TRANSISTOR 文件：235.68 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP160N055TUJ	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP160N055TUJ_15	MOS FIELD EFFECT TRANSISTOR 文件：215.94 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS

NP16产品属性

类型
描述
可下载：
SPICE
封装类型：
MP-25ZT/7pin TO-263
Nch/Pch：
Nch
通道数：
Single
汽车业：
YES
VDSS (V) 最大值：
40
ID (A)：
160
RDS (ON)(mΩ) 最大值@4V或4.5V：
5.4
RDS (ON)(mΩ) 最大值@10V或8V：
2
Ciss (pF) 典型值：
10500
Vgs (off) (V) 最大值：
2.5
VGSS (V)：
20
Pch (W)：
220
应用：
Automotive Use
安装类型：
Surface Mount
系列名称：
NP Series
QG (nC) 典型值：
180

NP16供应商更多...

更新时间：2026-5-14 15:52:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
洪芯国际半导体（深圳）有限公司	NP161N04TUG	NEC	26+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市宏世佳电子科技有限公司	NP160N04TDG	NEC	2025+	SOT263-7	4365	全新原厂原装产品、公司现货销售	询价
深圳市力拓辉电子有限公司	NP160N055TUK-E1-AY	Renesas	21+	TO-263-7pin	800	只做原装鄙视假货15118075546	询价
深圳市赛尔通科技有限公司	NP16DT	GI	23+		65480		询价
深圳市科恒伟业电子有限公司	NP161N04TUG-E1-AY	RENESASE	2450+	TO263-7	9485	只做原装正品现货或订货假一赔十!	询价
深圳市赛美科科技有限公司	NP16N04YUG-E1-AYMOS(场效应管)	RENESAS/瑞萨	新年份	DFN56	64540	一级代理原装正品现货,支持实单!	询价
深圳市芯皇电子有限公司	NP160N04TUG-E1-AY	NEC	TO263	23+	6000	原装现货有上库存就有货全网最低假一赔万	询价
深圳市美思瑞电子科技有限公司	NP160N04TUG-E1-AY	NEC	22+	TO263	12245	现货,原厂原装假一罚十!	询价
深圳市宇创芯科技有限公司	NP160N04TUG-E1-AY	NEC	24+	TO263	9600	原装现货,优势供应,支持实单!	询价
深圳市诺美思科技有限公司	NP16N06QLK-E1-AY#YB1	RENESAS		原厂封装	9800	原装进口公司现货假一赔百	询价

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2022-4-14
NP16N06QLK-E1-AY 瑞智芯只有原装
深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号： NP16N06QLK-E1-AY 类别分立半导体产品晶体管 - FET，MOSFET - 阵列制造商 Renesas Electronics America Inc 封装：8-PowerL
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深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：NP90N04NUK-S18-AY 类别分立半导体产品晶体管 - FET，MOSFET - 单个制造商 Renesas Electronics America Inc 包装：50 封装
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NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商
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NOSC107M006R0150 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商
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