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型号	功能描述	生产厂家企业	LOGO
NP16	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP160N04TUG	SWITCHING N-CHANNEL POWER MOS FET FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A	NEC 瑞萨	NEC
NP160N04TUG-E1-AY	SWITCHING N-CHANNEL POWER MOS FET FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A	NEC 瑞萨	NEC
NP160N04TUG-E1-AY	MOS FIELD EFFECT TRANSISTOR FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A	NEC 瑞萨	NEC
NP160N04TUG-E2-AY	SWITCHING N-CHANNEL POWER MOS FET FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A	NEC 瑞萨	NEC
NP160N04TUG-E2-AY	MOS FIELD EFFECT TRANSISTOR FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A	NEC 瑞萨	NEC
NP160N04TUJ	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli	RENESAS 瑞萨	RENESAS
NP160N04TUJ-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli	RENESAS 瑞萨	RENESAS
NP160N04TUJ-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli	RENESAS 瑞萨	RENESAS
NP160N04TUK	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat	RENESAS 瑞萨	RENESAS
NP160N04TUK	MOS FIELD EFFECT TRANSISTOR Features ･ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ･ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N04TUK_V01	MOS FIELD EFFECT TRANSISTOR Features ･ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ･ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N04TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat	RENESAS 瑞萨	RENESAS
NP160N04TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Features ･ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ･ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N04TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat	RENESAS 瑞萨	RENESAS
NP160N04TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Features ･ Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) ･ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N055TUJ	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appl	RENESAS 瑞萨	RENESAS
NP160N055TUJ-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appl	RENESAS 瑞萨	RENESAS
NP160N055TUJ-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appl	RENESAS 瑞萨	RENESAS
NP160N055TUK	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio	RENESAS 瑞萨	RENESAS
NP160N055TUK	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N055TUK_V01	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N055TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio	RENESAS 瑞萨	RENESAS
NP160N055TUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP160N055TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio	RENESAS 瑞萨	RENESAS
NP160N055TUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP16AT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16BT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16DT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16GT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16JT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16KT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16MT	16 AMPERE SILICON RECTIFIER [GENERAL INSTRUMENT] 16 AMPERE SILICON RECTIFIER FEATURES • Plastic package has Underwriters Laboratory Flammbility Classification 94V-O. • Exceeds Environomental standards of MIL-STD-19500. • High current capability • High surge capacity • Low forward voltage	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NP16N04YUG	MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP16N04YUG-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP16N04YUG-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP160N04TDG	SWITCHING N-CHANNEL POWER MOS FET 文件：297.12 Kbytes Page：8 Pages	NEC 瑞萨	NEC
NP160N04TDG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP160N04TDG_15	SWITCHING N-CHANNEL POWER MOS FET 文件：373.95 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TDG-E1-AY	SWITCHING N-CHANNEL POWER MOS FET 文件：297.12 Kbytes Page：8 Pages	NEC 瑞萨	NEC
NP160N04TDG-E1-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：373.95 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TDG-E2-AY	SWITCHING N-CHANNEL POWER MOS FET 文件：297.12 Kbytes Page：8 Pages	NEC 瑞萨	NEC
NP160N04TDG-E2-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：373.95 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUG	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP160N04TUG_15	SWITCHING N-CHANNEL POWER MOS FET 文件：364.65 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUG-E1-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：364.65 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUG-E2-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：364.65 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUJ	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUJ	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP160N04TUJ_15	MOS FIELD EFFECT TRANSISTOR 文件：203.5 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUJ-E2-AY	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANSISTOR 分立半导体产品晶体管 - FET，MOSFET - 单个	ETC 知名厂家	ETC
NP160N04TUK	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP160N04TUK	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP160N04TUK_15	MOS FIELD EFFECT TRANSISTOR 文件：235.68 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP160N055TUJ	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP160N055TUJ_15	MOS FIELD EFFECT TRANSISTOR 文件：215.94 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP160N055TUJ-E2-AY	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANSISTOR 分立半导体产品晶体管 - FET，MOSFET - 单个	ETC 知名厂家	ETC
NP160N055TUK	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP160N055TUK_15	MOS FIELD EFFECT TRANSISTOR 文件：123.92 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS

NP16产品属性

类型
描述
型号
NP16
功能描述
16 AMPERE SILICON RECTIFIER

NP16供应商更多...

更新时间：2026-3-1 13:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市卓越微芯电子有限公司	NP16N06QLK-E1-AY	RENESAS/瑞萨	25+		6500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市华睿芯科技有限公司	NP160N04TUG	NEC	24+	TO263-7	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市宇创芯科技有限公司	NP160N04TUG-E1-AY	NEC	24+	TO263	9600	原装现货,优势供应,支持实单!	询价
深圳市亿智腾科技有限公司	NP16N06YLL	RENESAS	25+	N/A	12708	原装现货17377264928微信同号	询价
贸泽芯城（深圳）电子科技有限公司	NP16N06QLK-E1-AY#YB1	RENESAS/瑞萨	23+	DFN	32687	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
现代芯城（深圳）科技有限公司	NP16N06YLL-E1-AY		24+	N/A	75000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市坤融电子科技有限公司	NP160N04TUG-E1	NEC	2025+	TO-263	800	原装进口价格优请找坤融电子!	询价
深圳市明嘉莱科技有限公司	NP160N04TUG-E1-AY	NEC	25+	TO263	880000	明嘉莱只做原装正品现货	询价
深圳市莱克讯科技有限公司	NP160N04TDG	NEC	1923+	SOT263-7	3000	绝对进口原装现货	询价
深圳市能元时代电子有限公司	NP161N04TUG-E1-AY	RENESASE	23+	TO263-7	12800	##公司主营品牌长期供应100%原装现货可含税提供技术	询价

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公司原装现货
2022-4-14
NP16N06QLK-E1-AY 瑞智芯只有原装
深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号： NP16N06QLK-E1-AY 类别分立半导体产品晶体管 - FET，MOSFET - 阵列制造商 Renesas Electronics America Inc 封装：8-PowerL
2021-9-4
NP90N04NUK-S18-AY 瑞智芯只有原装
深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：NP90N04NUK-S18-AY 类别分立半导体产品晶体管 - FET，MOSFET - 单个制造商 Renesas Electronics America Inc 包装：50 封装
2021-9-3
NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商
NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商
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NP16产品属性

NP16供应商更多...

NP16芯片相关品牌

NP16规格书下载地址

NP16参数引脚图相关

NP16数据表相关新闻

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NP16N06QLK-E1-AY 瑞智芯 只有原装

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NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商

NOSC107M006R0150 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商

NPA1006假一罚十

DdatasheetPDF页码索引

NP16N06QLK-E1-AY 瑞智芯只有原装

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