位置：首页 > IC中文资料第10209页 > NP160N055TUK
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP160N055TUK | MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio | RENESAS 瑞萨 |   | |
NP160N055TUK | MOS FIELD EFFECT TRANSISTOR Features Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified | RENESAS 瑞萨 | | |
NP160N055TUK | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
NP160N055TUK | Nch Single Power MOSFET 55V 160A 2.1mohm MP-25ZT/7pin TO-263 Automotive | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR Features Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Features Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Features Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.10 mΩ MAX. (VGS = 10 V, ID = 80 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive applicatio | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：123.92 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appl | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | |
NP160N055TUK产品属性
- 类型
描述
- 型号
NP160N055TUK
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
MP-25ZT7pinTO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESASE |
13+ |
TO263-7 |
800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESASE |
22+ |
TO263-7 |
20000 |
公司只做原装 品质保障 |
|||
JINGDAO/晶导微 |
23+ |
SMA(DO-214AC) |
69820 |
终端可以免费供样,支持BOM配单! |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESASE |
2450+ |
TO263-7 |
9485 |
只做原装正品现货或订货假一赔十! |
|||
Renesas |
21+ |
TO-263-7pin |
800 |
只做原装鄙视假货15118075546 |
|||
RENESAS/瑞萨 |
22+ |
TO-263-7p |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
RENESAS |
25+ |
TO263-7 |
800 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
NP160N055TUK规格书下载地址
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