型号 功能描述 生产厂家 企业 LOGO 操作
NP110N04PUJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 9500 pF TYP. • Designed for automotive applicati

RENESAS

瑞萨

NP110N04PUJ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP110N04PUJ

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

NP110N04PUJ

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 9500 pF TYP. • Designed for automotive applicati

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 9500 pF TYP. • Designed for automotive applicati

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

N-Channel Super Trench Power MOSFET

文件:587.87 Kbytes Page:6 Pages

HMSEMI

华之美半导体

NP110N04PUJ产品属性

  • 类型

    描述

  • 型号

    NP110N04PUJ

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    MOS FIELD EFFECT TRANSISTOR

更新时间:2025-11-23 15:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
8866
NEC
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
NEC
22+
NA
3000
原装正品,支持实单
NEC
23+
TO-263
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS/瑞萨
2022+
TO-263
50000
原厂代理 终端免费提供样品
NEC
23+
TO-263
279
全新原装正品现货,支持订货
RENESAS/瑞萨
23+
TO-263
32687
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
NEC
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
RENESAS/瑞萨
22+
TO-263
12500
瑞萨全系列在售,终端可出样品

NP110N04PUJ数据表相关新闻