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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP110N04PUJ | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 9500 pF TYP. • Designed for automotive applicati | RENESAS 瑞萨 |   | |
NP110N04PUJ | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NP110N04PUJ | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 9500 pF TYP. • Designed for automotive applicati | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 9500 pF TYP. • Designed for automotive applicati | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
N-Channel Super Trench Power MOSFET 文件：587.87 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | |
NP110N04PUJ产品属性
- 类型
描述
- 型号
NP110N04PUJ
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
NEC |
22+ |
NA |
3000 |
原装正品,支持实单 |
|||
Renesas(瑞萨) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
RENESAS(瑞萨)/IDT |
24+ |
TO2633 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
32687 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
NEC |
6000 |
面议 |
19 |
TO-263 |
|||
NEC |
23+ |
TO-263 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
24+ |
8866 |
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NP110N04PUJ规格书下载地址
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DdatasheetPDF页码索引
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