524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

524,288-Bit (64K x 8) High Performance CMOS EPROM

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

封装/外壳：28-DIP（0.600"，15.24mm） 包装：卷带（TR）剪切带（CT） 描述：IC EPROM 512KBIT PARALLEL 28DIP 集成电路（IC） 存储器

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

封装/外壳：28-CDIP（0.600"，15.24mm）窗口 包装：卷带（TR）剪切带（CT） 描述：IC EPROM 512KBIT PARALLEL 28CDIP 集成电路（IC） 存储器

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

524,288-Bit (64K x 8) High Performance CMOS EPROM

文件：159.75 Kbytes Page：10 Pages

512 Kbit 64Kb x8 UV EPROM and OTP EPROM

SUMMARY DESCRIPTION The M27C512 is a 512 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for applications where fast turn-around and pattern experi mentation are important requirements and is organized as 65536 by 8 bits. F

512K (64K x 8) UV EPROM and OTP EPROM

DESCRIPTION The M27C512 is a high speed 524,288 bit UV erasable and electrically programmable EPROM ideally suited for applications where fast turnaround and pattern experimentation are important requirements. Its is organized as 65,536 by 8 bits. The Window Ceramic Frit-Seal Dual-in-Line pa

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

512K (64K x 8-Bit) OTP EPROM

DESCRIPTION: Maxwell Technologies’ 27C512T high density 512-Kilobit one time programmable electrically programmable read only memory microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C512T features fast address times and low power dissipa

512 Kilobit (64 K x 8-Bit) CMOS EPROM

GENERAL DESCRIPTION The Am27C512 is a 512-Kbit, ultraviolet erasable programmable read-only memory. It is organized as 64K words by 8 bits per word, operates from a single +5 V supply, has a static standby mode, and features fast single address location programming. Products are available in wi