型号 功能描述 生产厂家&企业 LOGO 操作
27C512

512Kbit64Kbx8UVEPROMandOTPEPROM

SUMMARYDESCRIPTION TheM27C512isa512KbitEPROMofferedinthetworangesUV(ultravioleterase)andOTP(onetimeprogrammable).Itisideallysuitedforapplicationswherefastturn-aroundandpatternexperimentationareimportantrequirementsandisorganizedas65536by8bits. F

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
27C512

512K(64Kx8)UVEPROMandOTPEPROM

DESCRIPTION TheM27C512isahighspeed524,288bitUV erasableandelectricallyprogrammableEPROM ideallysuitedforapplicationswherefastturnaround andpatternexperimentationareimportant requirements.Itsisorganizedas65,536by8bits. TheWindowCeramicFrit-SealDual-in-Linepa

SYC

SYC Electronica

SYC

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏电子旺宏电子股份有限公司

MCNIX

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏电子旺宏电子股份有限公司

MCNIX

512Kbit64Kbx8UVEPROMandOTPEPROM

SUMMARYDESCRIPTION TheM27C512isa512KbitEPROMofferedinthetworangesUV(ultravioleterase)andOTP(onetimeprogrammable).Itisideallysuitedforapplicationswherefastturn-aroundandpatternexperimentationareimportantrequirementsandisorganizedas65536by8bits. F

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏电子旺宏电子股份有限公司

MCNIX

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏电子旺宏电子股份有限公司

MCNIX

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏电子旺宏电子股份有限公司

MCNIX

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏电子旺宏电子股份有限公司

MCNIX

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏电子旺宏电子股份有限公司

MCNIX

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

27C512产品属性

  • 类型

    描述

  • 型号

    27C512

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    512 Kbit 64Kb x8 UV EPROM and OTP EPROM

更新时间:2025-7-19 8:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
25+
NA
860000
明嘉莱只做原装正品现货
FUJITSU/富士通
24+
CLCC32
22055
郑重承诺只做原装进口现货
MX
2023+
DIP-28
8800
正品渠道现货 终端可提供BOM表配单。
WSI
CDIP镜
90+
1
全新原装进口自己库存优势
24+
原厂封装
3520
原装现货假一罚十
WINBOND
2013
DIP
500
全新
MX
24+
NA/
3530
原装现货,当天可交货,原型号开票
FUJITSU
2016+
PLCC32
8880
只做原装,假一罚十,公司可开17%增值税发票!
WSI
23+
CDIP镜
20000
全新原装假一赔十
SIGNETICS
24+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增

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