型号 功能描述 生产厂家&企业 LOGO 操作
27C512

512Kbit64Kbx8UVEPROMandOTPEPROM

SUMMARYDESCRIPTION TheM27C512isa512KbitEPROMofferedinthetworangesUV(ultravioleterase)andOTP(onetimeprogrammable).Itisideallysuitedforapplicationswherefastturn-aroundandpatternexperimentationareimportantrequirementsandisorganizedas65536by8bits. F

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
27C512

512K(64Kx8)UVEPROMandOTPEPROM

DESCRIPTION TheM27C512isahighspeed524,288bitUV erasableandelectricallyprogrammableEPROM ideallysuitedforapplicationswherefastturnaround andpatternexperimentationareimportant requirements.Itsisorganizedas65,536by8bits. TheWindowCeramicFrit-SealDual-in-Linepa

SYC

SYC Electronica

SYC

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏????????????旺宏电子

MCNIX

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏????????????旺宏电子

MCNIX

512Kbit64Kbx8UVEPROMandOTPEPROM

SUMMARYDESCRIPTION TheM27C512isa512KbitEPROMofferedinthetworangesUV(ultravioleterase)andOTP(onetimeprogrammable).Itisideallysuitedforapplicationswherefastturn-aroundandpatternexperimentationareimportantrequirementsandisorganizedas65536by8bits. F

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏????????????旺宏电子

MCNIX

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏????????????旺宏电子

MCNIX

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏????????????旺宏电子

MCNIX

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏????????????旺宏电子

MCNIX

512K-BIT[64Kx8]CMOSEPROM

GENERALDESCRIPTION TheMX27C512isa5Vonly,512K-bit,One-TimeProgrammableReadOnlyMemory.Itisorganizedas64Kwordsby8bitsperword,operatesfromasingle+5voltsupply,hasastaticstandbymode,andfeaturesfastsingleaddresslocationprogramming.Allprogrammingsignalsare

MCNIXMacronix International

????????????旺宏????????????旺宏电子

MCNIX

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

27C512产品属性

  • 类型

    描述

  • 型号

    27C512

  • 制造商

    MCNIX

  • 制造商全称

    Macronix International

  • 功能描述

    512K-BIT [64Kx8] CMOS EPROM

更新时间:2025-5-14 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS
23+
DIP-28
20000
全新原装假一赔十
TI/德州仪器
24+
DIP28
990000
明嘉莱只做原装正品现货
NS
三年内
1983
只做原装正品
TI/德州仪器
25+
DIP28
54648
百分百原装现货 实单必成 欢迎询价
A
TSOP
100
旧货可翻新包测
ST
21+
DIP/SOP/TSOP
2705
原装现货假一赔十
JAPAN制造
24+
LCC
66800
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
ST
25+23+
DIP
37140
绝对原装正品全新进口深圳现货
24+
CDIP
3629
原装优势!房间现货!欢迎来电!
NS
DIP
25635
一级代理 原装正品假一罚十价格优势长期供货

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