| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
27C512 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM SUMMARY DESCRIPTION The M27C512 is a 512 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for applications where fast turn-around and pattern experi mentation are important requirements and is organized as 65536 by 8 bits. F | STMICROELECTRONICS 意法半导体 |   | |
27C512 | 512K (64K x 8) UV EPROM and OTP EPROM DESCRIPTION The M27C512 is a high speed 524,288 bit UV erasable and electrically programmable EPROM ideally suited for applications where fast turnaround and pattern experimentation are important requirements. Its is organized as 65,536 by 8 bits. The Window Ceramic Frit-Seal Dual-in-Line pa | SYC | | |
27C512 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM | STMICROELECTRONICS 意法半导体 | | |
512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are | MCNIX ????????????旺宏电子 | | ||
512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are | MCNIX ????????????旺宏电子 | | ||
512 Kbit 64Kb x8 UV EPROM and OTP EPROM SUMMARY DESCRIPTION The M27C512 is a 512 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for applications where fast turn-around and pattern experi mentation are important requirements and is organized as 65536 by 8 bits. F | STMICROELECTRONICS 意法半导体 | | ||
512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are | MCNIX ????????????旺宏电子 | | ||
512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are | MCNIX ????????????旺宏电子 | | ||
512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are | MCNIX ????????????旺宏电子 | | ||
512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are | MCNIX ????????????旺宏电子 | | ||
512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are | MCNIX ????????????旺宏电子 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | |
27C512产品属性
- 类型
描述
- Die Source：
ATMEL
- Pkg：
JLCC
- Pins：
32
- Description：
PROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
26+ |
标准封装 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
MX |
25+ |
DIP28 |
3629 |
原装优势!房间现货!欢迎来电! |
|||
PHI |
25+23+ |
DIP-28 |
37281 |
绝对原装正品全新进口深圳现货 |
|||
ST |
23+ |
DIP |
8650 |
受权代理!全新原装现货特价热卖! |
|||
FUJITSU/富士通 |
2025+ |
TSSOP |
5000 |
原装进口价格优 请找坤融电子! |
|||
Rochester Electronics, LLC |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
MX |
25+ |
5 |
公司优势库存 热卖中!! |
||||
FUJITSU/富士通 |
2403+ |
CLCC32 |
6489 |
原装现货热卖!十年芯路!坚持! |
|||
CYPRESS(赛普拉斯) |
25+ |
- |
14093 |
正规渠道,大量现货,只等你来。 |
|||
NS |
DIP |
25635 |
一级代理 原装正品假一罚十价格优势长期供货 |
27C512规格书下载地址
27C512参数引脚图相关
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
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- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 27E1082
- 27E1081
- 27E1080
- 27E1079
- 27DW-9W
- 27DW-6W
- 27DW-3W
- 27DW_18
- 27DS-BR
- 27D-6W
- 27D-3W
- 27D_17
- 27CP-BR
- 27C801
- 27C800
- 27C64A
- 27C64
- 27C513
- 27C512T
- 27C512A
- 27C512-17/J
- 27C51215BXA
- 27C512-15B/4C
- 27C512-150JI
- 27C512-15/PQTP
- 27C512-15/LP
- 27C512-15/J
- 27C512-15
- 27C512-12F1
- 27C51212F1
- 27C51212B1
- 27C512-120
- 27C512-12/L093
- 27C512-12/L092
- 27C512-12
- 27C512-10
- 27C512/BXA-25
- 27C512/BXA-20
- 27C512 WAF
- 27C512 DIE
- 27C4111-90
- 27C4111-15
- 27C4111-12
- 27C4111-10
- 27C4100-15
- 27C4100-12
- 27C4100-10
- 27C4100
- 27C4096-85JC
- 27C4096-15
- 27C4096-12
- 27C4096-10
- 27C4096
- 27C4002
- 27C4001
- 27C4000-90
- 27C4000-15
- 27C4000-12
- 27C4000-10
- 27C256TRPDS-20
- 27C256T
- 27C256R
- 27C256N
- 27C256D
- 27C256A
- 27C256
- 27C215
- 27C210
- 27C2048
- 27C2001
- 27C160
- 27C16
- 27C128
- 27C1100
- 27C1028
- 27C1024
- 27C1001
27C512数据表相关新闻
28.901.U166.10
LED照明安裝配件 Fixing element Push to fix
2023-12-29282080-1
进口代理
2022-11-2627110B103JO0高压传输云母电容器
云母电容器采用坚固的固态铸造封装，可提供高抗冲击和振动能力
2022-10-18282080-1新到货原厂渠道，现货配单！
15-29-1027 34566-0803 5749070-9 6-102618-5 171814-0003 5788643-1 15-31-1021 368502-1 1469001-1 STO-2.5T-250N 19435-1014 90142-0006 34797-0202 3900-0281 5747194-3 1355348-1 B6B-PH-SM4-TB(LF)(SN) 5794172-3 1-1355133-2 15-91-0060 6-103897-2 XHP-9 534267-1 35
2022-8-1227C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF6.3V6.3X5.3，100113DC，10MQ040NPBF，11596-21
27C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF 6.3V 6.3X5.3，100113DC，10MQ040NPBF，11596-21
2020-1-227C256B原装正品价格优势
我们竭诚为您服务 0755-82340907 13342971909 吴小姐
2019-3-1
DdatasheetPDF页码索引
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