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型号	功能描述	生产厂家企业	LOGO
27C512	512 Kbit 64Kb x8 UV EPROM and OTP EPROM SUMMARY DESCRIPTION The M27C512 is a 512 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for applications where fast turn-around and pattern experi mentation are important requirements and is organized as 65536 by 8 bits. F	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
27C512	512K (64K x 8) UV EPROM and OTP EPROM DESCRIPTION The M27C512 is a high speed 524,288 bit UV erasable and electrically programmable EPROM ideally suited for applications where fast turnaround and pattern experimentation are important requirements. Its is organized as 65,536 by 8 bits. The Window Ceramic Frit-Seal Dual-in-Line pa	SYC	SYC
27C512	512 Kbit 64Kb x8 UV EPROM and OTP EPROM	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
27C512-10	512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are	MCNIX ????????????旺宏电子	MCNIX
27C512-12	512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are	MCNIX ????????????旺宏电子	MCNIX
27C512-120	512 Kbit 64Kb x8 UV EPROM and OTP EPROM SUMMARY DESCRIPTION The M27C512 is a 512 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for applications where fast turn-around and pattern experi mentation are important requirements and is organized as 65536 by 8 bits. F	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
27C512-15	512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are	MCNIX ????????????旺宏电子	MCNIX
27C512-45	512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are	MCNIX ????????????旺宏电子	MCNIX
27C512-55	512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are	MCNIX ????????????旺宏电子	MCNIX
27C512-70	512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are	MCNIX ????????????旺宏电子	MCNIX
27C512-90	512K-BIT [64Kx8] CMOS EPROM GENERAL DESCRIPTION The MX27C512 is a 5V only, 512K-bit, One-Time Programmable Read Only Memory. It is organized as 64K words by 8 bits per word, operates from a single +5volt supply, has a static standby mode, and features fast single address location programming. All program ming signals are	MCNIX ????????????旺宏电子	MCNIX
27C512A	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10EL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10EP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10ESO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10ETS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10EVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10IL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10IP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10ISO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10ITS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10IVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10L	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10P	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10SO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10TS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10VS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12EL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12EP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12ESO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12ETS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12EVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12IL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12IP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12ISO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12ITS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12IVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12L	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12P	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12SO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12TS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12VS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15EL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15EP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15ESO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15ETS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15EVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15IL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15IP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15ISO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15ITS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15IVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15L	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15P	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15SO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15TS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15VS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90EL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90EP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90ESO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip

27C512产品属性

类型
描述
型号
27C512
制造商
STMICROELECTRONICS
制造商全称
STMicroelectronics
功能描述
512 Kbit 64Kb x8 UV EPROM and OTP EPROM

27C512供应商更多...

更新时间：2026-1-5 16:21:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
谛辉(北京/上海/青岛 )电子科技有限公司	27C512(NM27C512Q-150)	NS	25+	SOP-8	18000	原厂直接发货进口原装	询价
标准国际(香港)有限公司	27C512DC-70	MX	25+		5	公司优势库存热卖中!!	询价
深圳市力拓辉电子有限公司	27C512A-12I/SO	MICROCHI	22+		5000	只做原装鄙视假货15118075546	询价
深圳市向鸿伟业电子有限公司	27C512-20	FUJITSU/富士通	2403+	CLCC32	6489	原装现货热卖!十年芯路!坚持!	询价
深圳市高捷芯城科技有限公司	27C512-70WMB	CYPRESS(赛普拉斯)	24+	-	14093	正规渠道,大量现货,只等你来。	询价
上海金庆电子技术有限公司	27C512-20	TEXASINSTRUMENTS	新		25	全新原装货期两周	询价
深圳市赛美科科技有限公司	27C512	NS		DIP	25635	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市富芯乐电子科技有限公司	27C512-15/L	MICROCHIP	24+	PLCC	5000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市东来宝电子科技有限公司	27C512-20	FUJITSU/富士通	24+	CLCC32	22055	郑重承诺只做原装进口现货	询价
深圳市澳亿芯电子科技有限公司	27C512-25	FUJ	90+	SCC	55	普通	询价

27C512芯片相关品牌

27C512规格书下载地址

27C512参数引脚图相关

27C512数据表相关新闻

28.901.U166.10
LED照明安裝配件 Fixing element Push to fix
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282080-1
进口代理
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云母电容器采用坚固的固态铸造封装，可提供高抗冲击和振动能力
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15-29-1027 34566-0803 5749070-9 6-102618-5 171814-0003 5788643-1 15-31-1021 368502-1 1469001-1 STO-2.5T-250N 19435-1014 90142-0006 34797-0202 3900-0281 5747194-3 1355348-1 B6B-PH-SM4-TB(LF)(SN) 5794172-3 1-1355133-2 15-91-0060 6-103897-2 XHP-9 534267-1 35
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27C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF6.3V6.3X5.3，100113DC，10MQ040NPBF，11596-21
27C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF 6.3V 6.3X5.3，100113DC，10MQ040NPBF，11596-21
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我们竭诚为您服务 0755-82340907 13342971909 吴小姐
2019-3-1

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28.901.U166.10

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27C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF6.3V6.3X5.3，100113DC，10MQ040NPBF，11596-21

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