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型号	功能描述	生产厂家企业	LOGO
27C512A	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A	512K (64K x 8) CMOS EPROM	Microchip 微芯科技	Microchip
27C512	512K (64K x 8) UV EPROM and OTP EPROM DESCRIPTION The M27C512 is a high speed 524,288 bit UV erasable and electrically programmable EPROM ideally suited for applications where fast turnaround and pattern experimentation are important requirements. Its is organized as 65,536 by 8 bits. The Window Ceramic Frit-Seal Dual-in-Line pa	SYC	SYC
27C512	512 Kbit 64Kb x8 UV EPROM and OTP EPROM SUMMARY DESCRIPTION The M27C512 is a 512 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for applications where fast turn-around and pattern experi mentation are important requirements and is organized as 65536 by 8 bits. F	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
27C512A-10EL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10EP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10ESO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10ETS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10EVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10IL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10IP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10ISO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10ITS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10IVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10L	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10P	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10SO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10TS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-10VS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12EL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12EP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12ESO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12ETS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12EVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12IL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12IP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12ISO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12ITS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12IVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12L	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12P	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12SO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12TS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-12VS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15EL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15EP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15ESO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15ETS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15EVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15IL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15IP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15ISO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15ITS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15IVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15L	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15P	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15SO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15TS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-15VS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90EL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90EP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90ESO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90ETS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90EVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90IL	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90IP	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90ISO	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90ITS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90IVS	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip
27C512A-90L	512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T	Microchip 微芯科技	Microchip

27C512A产品属性

类型
描述
型号
27C512A
制造商
MICROCHIP
制造商全称
Microchip Technology
功能描述
512K(64K x 8) CMOS EPROM

27C512A供应商更多...

更新时间：2026-1-5 16:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市力拓辉电子有限公司	27C512A-12I/SO	MICROCHI	22+		5000	只做原装鄙视假货15118075546	询价
上海金庆电子技术有限公司	27C512A-15/L	MICROCHIP	新		18	全新原装货期两周	询价
深圳市诺美思科技有限公司	27C512A-15/P	MICROCHIP		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳航星空电子技术有限公司	27C512A-15/P	MICROCHIP	23+	DIP	10000	公司只做原装，可来电咨询	询价
深圳市安富世纪电子有限公司	27C512A-15/P	MICROCHIP	23+	DIP	5000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	27C512A-7015CP		23+	DIP28	7000		询价
深圳市高捷芯城科技有限公司	27C512AE200/883C	TI	25+	-	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市得捷芯城科技有限公司	27C512A-12I/SO	MROCHIP/微芯	24+	NA/	18000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市联世界科技有限公司	27C512AK-12	MIT	24+/25+		12	原装正品现货库存价优	询价
深圳市冠亿通科技有限公司	27C512AE200/883C	National	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价

27C512A芯片相关品牌

27C512A规格书下载地址

27C512A参数引脚图相关

27C512A数据表相关新闻

28.901.U166.10
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进口代理
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云母电容器采用坚固的固态铸造封装，可提供高抗冲击和振动能力
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15-29-1027 34566-0803 5749070-9 6-102618-5 171814-0003 5788643-1 15-31-1021 368502-1 1469001-1 STO-2.5T-250N 19435-1014 90142-0006 34797-0202 3900-0281 5747194-3 1355348-1 B6B-PH-SM4-TB(LF)(SN) 5794172-3 1-1355133-2 15-91-0060 6-103897-2 XHP-9 534267-1 35
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27C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF6.3V6.3X5.3，100113DC，10MQ040NPBF，11596-21
27C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF 6.3V 6.3X5.3，100113DC，10MQ040NPBF，11596-21
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我们竭诚为您服务 0755-82340907 13342971909 吴小姐
2019-3-1

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27C512A产品属性

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28.901.U166.10

282080-1

27110B103JO0高压传输云母电容器

282080-1新到货原厂渠道，现货配单！

27C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF6.3V6.3X5.3，100113DC，10MQ040NPBF，11596-21

27C256B原装正品价格优势

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