型号 功能描述 生产厂家&企业 LOGO 操作
27C512A

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512Kbit64Kbx8UVEPROMandOTPEPROM

SUMMARYDESCRIPTION TheM27C512isa512KbitEPROMofferedinthetworangesUV(ultravioleterase)andOTP(onetimeprogrammable).Itisideallysuitedforapplicationswherefastturn-aroundandpatternexperimentationareimportantrequirementsandisorganizedas65536by8bits. F

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

512K(64Kx8)UVEPROMandOTPEPROM

DESCRIPTION TheM27C512isahighspeed524,288bitUV erasableandelectricallyprogrammableEPROM ideallysuitedforapplicationswherefastturnaround andpatternexperimentationareimportant requirements.Itsisorganizedas65,536by8bits. TheWindowCeramicFrit-SealDual-in-Linepa

SYC

SYC Electronica

SYC

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

512K(64Kx8)CMOSEPROM

ObsoleteDevice:27C512AisaCMOS512KbitelectricallyProgrammableReadOnlyMemory(EPROM).Thedeviceisorganizedinto64Kwordsby8bits(64Kbytes). Accessingindividualbytesfromanaddresstransitionorfrompower-up(chipenablepingoinglow)isaccomplishedinlessthan90ns.T

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip

27C512A产品属性

  • 类型

    描述

  • 型号

    27C512A

  • 制造商

    MICROCHIP

  • 制造商全称

    Microchip Technology

  • 功能描述

    512K(64K x 8) CMOS EPROM

更新时间:2025-7-19 17:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROCHIP
21+
DIP
15
原装现货假一赔十
National
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
MICROCHIP
23+
DIP
15
正规渠道,只有原装!
MX
96
14
公司优势库存 热卖中!!
MICROCHIP
18
全新原装 货期两周
MROCHIP/微芯
24+
NA/
18000
优势代理渠道,原装正品,可全系列订货开增值税票
ST
23+
DIP
5000
原装正品,假一罚十
MICROCHIP
23+
DIP
10000
公司只做原装,可来电咨询
MICROCHIP
24+
DIP
10000
公司只有原装
23+
DIP28
7000

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