位置：首页 > IC中文资料第6390页 > 27C512A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
27C512A | 512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 |   | |
27C512A | 512K (64K x 8) CMOS EPROM | MICROCHIP 微芯科技 | | |
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | | ||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | MICROCHIP 微芯科技 | |
27C512A产品属性
- 类型
描述
- 型号
27C512A
- 制造商
MICROCHIP
- 制造商全称
Microchip Technology
- 功能描述
512K(64K x 8) CMOS EPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MIT |
24+/25+ |
12 |
原装正品现货库存价优 |
||||
MICROCHIP |
9437+ |
DIP |
15 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MICROCHIP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
MICROCHIP |
24+ |
DIP28 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
MICROCHIP |
25+ |
DIP |
18000 |
原装优势现货 |
|||
MICROCHIP/微芯 |
23+ |
DIP |
66600 |
专业芯片配单原装正品假一罚十 |
|||
MICROCHI |
22+ |
5000 |
只做原装鄙视假货15118075546 |
||||
MICROCHIP |
2511 |
DIP |
5904 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
MICROCHIP/微芯 |
23+ |
LCC-32 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
26+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
27C512A规格书下载地址
27C512A参数引脚图相关
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 27E122
- 27E1082
- 27E1081
- 27E1080
- 27E1079
- 27DW-9W
- 27DW-6W
- 27DW-3W
- 27DW_18
- 27DS-BR
- 27D-6W
- 27D-3W
- 27D_17
- 27CP-BR
- 27C801
- 27C800
- 27C64A
- 27C64
- 27C513
- 27C512T
- 27C512A12IL
- 27C512A-12I/SO
- 27C512A-12I/P
- 27C512A-12I/L
- 27C512A-12I/K
- 27C512A-12I/J
- 27C512A12FA
- 27C512A-12EVS
- 27C512A-12/P
- 27C512A-12/K
- 27C512A-12/J
- 27C512A-10VS
- 27C512A-10TS
- 27C512A-10SO
- 27C512A10SO
- 27C512A-10P
- 27C512A10P
- 27C512A-10L
- 27C512A10L
- 27C512A-10IVS
- 27C512-90E/P
- 27C512-90E/L
- 27C512-90E/K
- 27C512-90E/J
- 27C512-90/TS
- 27C512-90/SO
- 27C512-90/P
- 27C512-90/L
- 27C512-90/K
- 27C512-90/J
- 27C512-90
- 27C512-75DC
- 27C512-70WMB
- 27C512-70DM/B
- 27C512-70
- 27C512-55DM/B
- 27C512-55DI
- 27C512-55
- 27C512-45
- 27C51225JL
- 27C512
- 27C4100
- 27C4096
- 27C4001
- 27C256T
- 27C256R
- 27C256N
- 27C256D
- 27C256A
- 27C256
- 27C215
- 27C210
- 27C2048
- 27C2001
- 27C160
- 27C16
- 27C128
- 27C1100
- 27C1028
- 27C1024
27C512A数据表相关新闻
28.901.U166.10
LED照明安裝配件 Fixing element Push to fix
2023-12-29282080-1
进口代理
2022-11-2627110B103JO0高压传输云母电容器
云母电容器采用坚固的固态铸造封装，可提供高抗冲击和振动能力
2022-10-18282080-1新到货原厂渠道，现货配单！
15-29-1027 34566-0803 5749070-9 6-102618-5 171814-0003 5788643-1 15-31-1021 368502-1 1469001-1 STO-2.5T-250N 19435-1014 90142-0006 34797-0202 3900-0281 5747194-3 1355348-1 B6B-PH-SM4-TB(LF)(SN) 5794172-3 1-1355133-2 15-91-0060 6-103897-2 XHP-9 534267-1 35
2022-8-1227C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF6.3V6.3X5.3，100113DC，10MQ040NPBF，11596-21
27C040Q100，27C128JL，27C256-15CHA，27C512-15A，030N03LS，030N03MS，080N03LS，080N03MS，1008LS-103XJLC，1009S12WFR，100UF 6.3V 6.3X5.3，100113DC，10MQ040NPBF，11596-21
2020-1-227C256B原装正品价格优势
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2019-3-1
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