封装/外壳：32-TFSOP（0.724"，18.40mm 宽） 包装：卷带（TR）剪切带（CT） 描述：IC EPROM 1MBIT PARALLEL 32TSOP 集成电路（IC） 存储器

封装/外壳：32-TFSOP（0.724"，18.40mm 宽） 包装：卷带（TR）剪切带（CT） 描述：IC EPROM 1MBIT PARALLEL 32TSOP 集成电路（IC） 存储器

1,048,576-Bit 128K x 8 High Performance CMOS EPROM

General Description The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during rea

1,048,576-Bit 128K x 8 High Performance CMOS EPROM

General Description The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during rea

1,048,576-Bit 128K x 8 High Performance CMOS EPROM

General Description The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during rea

128K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 ´8 bits that operates on a single 5 volt power supply. The W27C010 provides an electrical chip erase function. FEATURES · High speed access time: 70/15

Military 128K x 8 CMOS EPROM

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