128K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 ´8 bits that operates on a single 5 volt power supply. The W27C010 provides an electrical chip erase function. FEATURES · High speed access time: 70/15

128K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 ´8 bits that operates on a single 5 volt power supply. The W27C010 provides an electrical chip erase function. FEATURES · High speed access time: 70/15

128K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 ´8 bits that operates on a single 5 volt power supply. The W27C010 provides an electrical chip erase function. FEATURES · High speed access time: 70/15

128K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 ´8 bits that operates on a single 5 volt power supply. The W27C010 provides an electrical chip erase function. FEATURES · High speed access time: 70/15

128K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 ´8 bits that operates on a single 5 volt power supply. The W27C010 provides an electrical chip erase function. FEATURES · High speed access time: 70/15

128K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 ´8 bits that operates on a single 5 volt power supply. The W27C010 provides an electrical chip erase function. FEATURES · High speed access time: 70/15

128K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 ´8 bits that operates on a single 5 volt power supply. The W27C010 provides an electrical chip erase function. FEATURES · High speed access time: 70/15

1,048,576-Bit (128K x 8) High Performance CMOS EPROM

General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during rea

1 Megabit 128K x 8 OTP CMOS EPROM

Description The AT27C010/L is a low-power, high performance 1,048,576 bit one-time programmable read only memory (OTP EPROM) organized as 128K by 8 bits. They require only one 5V power supply in normal read mode operation. Any byte can be accessed in less than 45 ns, eliminating the need for spee

1 Megabit (128K x 8-Bit) - OTP EPROM

DESCRIPTION: Maxwell Technologies’ 27C010T high density 1 Megabit One-time Programmable Electrically Programmable Read Only Memory microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C010T features fast address times and low power dissipa

1 Megabit (128 K x 8-Bit) CMOS EPROM

GENERAL DESCRIPTION The Am27C010 is a 1 Megabit, ultraviolet erasable programmable read-only memory. It is organized as 128K words by 8 bits per word, operates from a single +5 V supply, has a static standby mode, and features fast single address location programming. Products are available in wi

1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns

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