丝印代码：NH245Q；SN74LVC8T245-Q1 Automotive 8-Bit Dual-Supply Bus Transceiver With Configurable Voltage Translation and 3-State Outputs

1 Features • Control inputs VIH/VIL levels are referenced to VCCA voltage • VCC isolation feature – if either VCC input is at GND, all are in the high-impedance state • Fully configurable dual-rail design allows each port to operate over the full 1.65-V to 5.5-V powersupply range • Latch-u

丝印代码：NH245Q；SN74LVC8T245-Q1 Automotive 8-Bit Dual-Supply Bus Transceiver With Configurable Voltage Translation and 3-State Outputs

1 Features • Control inputs VIH/VIL levels are referenced to VCCA voltage • VCC isolation feature – if either VCC input is at GND, all are in the high-impedance state • Fully configurable dual-rail design allows each port to operate over the full 1.65-V to 5.5-V powersupply range • Latch-u

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

VHF power MOS transistor

文件：91.6 Kbytes Page：12 Pages