型号 功能描述 生产厂家 企业 LOGO 操作
NESG270034

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9

RENESAS

瑞萨

NESG270034

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

文件:349.47 Kbytes Page:11 Pages

CEL

NESG270034

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

CEL

NESG270034

NPN Sige Rf Transistor For Medium Output Power Amplification (2 W) 3-Pin Power Minimold (34 Pkg)

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9

RENESAS

瑞萨

RF & Microwave device

文件:137.58 Kbytes Page:2 Pages

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

文件:349.47 Kbytes Page:11 Pages

CEL

包装:散装 描述:BOARD EVAL FOR NESG270034 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

文件:349.47 Kbytes Page:11 Pages

CEL

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

文件:349.47 Kbytes Page:11 Pages

CEL

封装/外壳:TO-243AA 包装:散装 描述:TRANSISTOR NPN 25V 3-MINI 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

NESG270034产品属性

  • 类型

    描述

  • 型号

    NESG270034

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT

更新时间:2026-1-2 13:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
24+
SOT89
8500
郑重承诺只做原装进口现货
NEC
2402+
MINI-3
8324
原装正品!实单价优!
NEC
23+
MINI-3
35706
全新原装正品现货,支持订货
RENESAS/瑞萨
2511
SOT-89
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENESAS/瑞萨
2025+
SOT-89
5000
原装进口价格优 请找坤融电子!
恩XP
23+
10
27000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
NEC
23+
MINI-3
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS/瑞萨
14+
SOT-89
880000
明嘉莱只做原装正品现货
RENESAS/瑞萨
2447
SOT-89
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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