型号 功能描述 生产厂家 企业 LOGO 操作
NESG270034

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9

RENESAS

瑞萨

NESG270034

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

文件:349.47 Kbytes Page:11 Pages

CEL

NESG270034

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

CEL

NESG270034

NPN Sige Rf Transistor For Medium Output Power Amplification (2 W) 3-Pin Power Minimold (34 Pkg)

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9

RENESAS

瑞萨

RF & Microwave device

文件:137.58 Kbytes Page:2 Pages

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

文件:349.47 Kbytes Page:11 Pages

CEL

包装:散装 描述:BOARD EVAL FOR NESG270034 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

文件:349.47 Kbytes Page:11 Pages

CEL

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

文件:349.47 Kbytes Page:11 Pages

CEL

封装/外壳:TO-243AA 包装:散装 描述:TRANSISTOR NPN 25V 3-MINI 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

NESG270034产品属性

  • 类型

    描述

  • 型号

    NESG270034

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT

更新时间:2025-10-31 16:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
23+
SOT-89
15000
只做进口原装假一罚百
NEC
2450+
SOT89
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS
12+
SOT89
1000
原装现货价格有优势量大可以发货
RENESAS/瑞萨
23+
SOT-89
6000
专业配单保证原装正品假一罚十
RENESAS
2021
SOT89
1565
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
25+
SOT89
6000
原厂原装,价格优势
RENESAS/瑞萨
24+
NA/
928
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
2402+
MINI-3
8324
原装正品!实单价优!
RENESAS
24+
SOT89
8500
郑重承诺只做原装进口现货
RENESAS
原厂封装
9800
原装进口公司现货假一赔百

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