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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG270034-A | RF & Microwave device 文件：137.58 Kbytes Page：2 Pages | RENESAS 瑞萨 |   | |
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9 | RENESAS 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) 文件：349.47 Kbytes Page：11 Pages | CEL | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 9 | RENESAS 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) 文件：349.47 Kbytes Page：11 Pages | CEL | |
NESG270034-A产品属性
- 类型
描述
- 型号
NESG270034-A
- 功能描述
射频硅锗晶体管 NPN Medium Output
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NEC |
24+ |
Mini3P |
7500 |
||||
NECT1K |
25+23+ |
SOT-343 |
17683 |
绝对原装正品全新进口深圳现货 |
|||
原装 |
1923+ |
SOT343 |
8900 |
公司库存原装低价格欢迎实单议价 |
|||
RENESAS/瑞萨 |
23+ |
SOT-89 |
6000 |
专业配单保证原装正品假一罚十 |
|||
NEC |
08+ |
MINI-3 |
500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
23+ |
SOT-89 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC(VA) |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
NECT1K |
22+ |
SOT-343 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
RENESAS |
12+ |
SOT89 |
1000 |
原装现货价格有优势量大可以发货 |
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NESG270034-A规格书下载地址
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DdatasheetPDF页码索引
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