位置：首页 > IC中文资料第11303页 > NESG240034
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG240034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set | NEC 瑞萨 |   | |
NESG240034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set | RENESAS 瑞萨 | | |
NESG240034 | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) | RENESAS 瑞萨 | | |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set | NEC 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set | NEC 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set | RENESAS 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set | NEC 瑞萨 | | ||
RF & Microwave device 文件：137.58 Kbytes Page：2 Pages | RENESAS 瑞萨 | | ||
ALL DIMENSIONS IN MM [INCH] 文件：119.89 Kbytes Page：1 Pages | E-SWITCH | |
NESG240034产品属性
- 类型
描述
- 型号
NESG240034
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD(34 PKG)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
|||
RENESAS/瑞萨 |
22+ |
SOT-89 |
20000 |
只做原装 |
|||
NEC |
16+ |
SOD-89 |
13800 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
NEC |
25+ |
SOT89 |
36000 |
原厂原装,价格优势 |
|||
RENESAS/瑞萨 |
24+ |
SOT89 |
63000 |
只做全新原装进口现货 |
|||
RENESAS/瑞萨 |
2450+ |
SOT89 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
FET |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEC |
25+ |
SOT-89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
RENESAS/瑞萨 |
2025+ |
SOT-89 |
5000 |
原装进口价格优 请找坤融电子! |
|||
RENESAS/瑞萨 |
2447 |
34PACKGE |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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DdatasheetPDF页码索引
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