NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

FEATURES

• The device is an ideal choice for low noise, low distortion amplification.

NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz

• PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

• OIP3 = 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

• Maximum stable power gain: MSG =11.5 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz

• SiGe HBT technology (UHS2) : fT = 10.0 GHz

• This product is improvement of ESD of NESG2xxx series.

• 3-pin power minimold (34 PKG)