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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG210833 | NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.7dBTYP.@VCE=5V,IC=5mA,f=1GHz NF=0.9dBTYP.@VCE=5V,IC=30mA,f=1GH | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  |   |
NESG210833 | NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.7dBTYP.@VCE=5V,IC=5mA,f=1GHz NF=0.9dBTYP.@VCE=5V,IC=30mA,f=1GH | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | |
NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.7dBTYP.@VCE=5V,IC=5mA,f=1GHz NF=0.9dBTYP.@VCE=5V,IC=30mA,f=1GH | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.7dBTYP.@VCE=5V,IC=5mA,f=1GHz NF=0.9dBTYP.@VCE=5V,IC=30mA,f=1GH | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.7dBTYP.@VCE=5V,IC=5mA,f=1GHz NF=0.9dBTYP.@VCE=5V,IC=30mA,f=1GH | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINMINIMOLD(33PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.7dBTYP.@VCE=5V,IC=5mA,f=1GHz NF=0.9dBTYP.@VCE=5V,IC=30mA,f=1GH | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
Pin-Configurable33ADC/DCPowerModulewithPMBusInterface Features •33Asinglechanneloutputcurrent •WideVINrange:4.5Vto14V •Programmableoutputvoltage •0.6Vto5Voutputvoltagesettings •±1.2accuracyoverline/load/temperature •PMBusInterfaceand/orPin-strapmode •Pin-strapmodeforstandardsettings •VOUT,switchingfrequenc | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | |
NESG210833产品属性
- 类型
描述
- 型号
NESG210833
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
17050 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
24+ |
SOT-23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
24+ |
SOT23 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
15+ |
SOT23 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
17+ |
SOT23/SOT323 |
9988 |
只做原装进口,自己库存 |
|||
RENESAS/瑞萨 |
2450+ |
SOT23-3 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
23+ |
SC-59 |
45000 |
原装正品现货 |
|||
RENESAS/瑞萨 |
22+ |
SC-59 |
3000 |
原装正品,支持实单 |
|||
RENESAS/瑞萨 |
22+ |
SOT23 |
6000 |
现货,原厂原装假一罚十! |
|||
RENESAS/瑞萨 |
24+ |
SOT23 |
54000 |
郑重承诺只做原装进口现货 |
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DdatasheetPDF页码索引
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