NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

FEATURES

• The device is an ideal choice for low noise, low distortion amplification.

NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz

NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz

• PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz

• OIP3 = 31 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz

• Maximum stable power gain: MSG =16.0 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz

• SiGe HBT technology (UHS2) : fT = 15.5 GHz

• 3-pin minimold (33 PKG)