位置：首页 > IC中文资料第1501页 > NESG2021M05-T1-A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG2021M05-T1-A | NPNSiGeRFTransistorforLowNoise,High-GainAmplification FEATURES •Thisdeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=3mA,f=5.2GHz •Maximumstablepowergain:MSG=22.5dBT | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NESG2021M05-T1-A | NECsNPNSiGeHIGHFREQUENCYTRANSISTOR 文件：729.7 Kbytes Page：14 Pages | CEL California Eastern Laboratories |  | |
NPNSiGeRFTransistorforLowNoise,High-GainAmplification FEATURES •Thisdeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=3mA,f=5.2GHz •Maximumstablepowergain:MSG=22.5dBT | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NESG2021M05-T1-A产品属性
- 类型
描述
- 型号
NESG2021M05-T1-A
- 功能描述
射频硅锗晶体管 NPN SiGe High Freq
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
20+ |
SOT343 |
49000 |
原装优势主营型号-可开原型号增税票 |
|||
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
NEC |
23+ |
NA/ |
2800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
1742+ |
SOT343 |
98215 |
只要网上有绝对有货!只做原装正品! |
|||
SOT-343 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
6000 |
面议 |
19 |
SOT-343(SOT- |
|||
ROHM |
2022+ |
TO-220F |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NEC |
SOT343 |
399000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
NEC/Renesas Electronics Americ |
21+ |
SOT343 |
5500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
07+ |
SOT343 |
329 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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NESG2021M05-T1-A规格书下载地址
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DdatasheetPDF页码索引
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