位置：首页 > IC中文资料第1501页 > NESG2021M05-T1-A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG2021M05-T1-A | NPN SiGe RF Transistor for Low Noise, High-Gain Amplification FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB T | RENESAS 瑞萨 |   | |
NESG2021M05-T1-A | NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：729.7 Kbytes Page：14 Pages | CEL | | |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB T | RENESAS 瑞萨 | |
NESG2021M05-T1-A产品属性
- 类型
描述
- 型号
NESG2021M05-T1-A
- 功能描述
射频硅锗晶体管 NPN SiGe High Freq
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2511 |
6-PINM |
5427 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NEC |
23+ |
SOT-343 |
50000 |
原装正品 支持实单 |
|||
RENESAS |
24+ |
6-PINM |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
NEC |
24+ |
SOT343 |
9700 |
绝对原装正品现货假一罚十 |
|||
RENESAS/瑞萨 |
25+ |
SOT343 |
18239 |
RENESAS/瑞萨原装特价NESG2021M05-T1-A即刻询购立享优惠#长期有货 |
|||
NEC |
24+ |
SOT-343 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
24+ |
SOT-343 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
2447 |
SOT-343 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC |
NEW |
原厂封装 |
9896 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
RENESAS/瑞萨 |
23+ |
SOT343 |
50000 |
全新原装正品现货,支持订货 |
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DdatasheetPDF页码索引
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