NE521价格

参考价格:¥16.3549

型号:NE521DG 品牌:ONSemi 备注:这里有NE521多少钱,2025年最近7天走势,今日出价,今日竞价,NE521批发/采购报价,NE521行情走势销售排行榜,NE521报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NE521

High-speed dual-differential comparator/sense amp

FEATURES • 12 ns maximum guaranteed propagation delay • 20 µA maximum input bias current • TTL compatible strobes and outputs • Large common-mode input voltage range • Operates from standard supply voltages APPLICATIONS • MOS memory sense amp • A-to-D conversion • High-speed line receiver

Philips

飞利浦

NE521

High?뭆peed Dual?묭ifferential Comparator/Sense Amp

文件:123.78 Kbytes Page:7 Pages

ONSEMI

安森美半导体

NE521

High-speed dual-differential comparator/sense amp

ETC

知名厂家

NE521

Dual Differential Comparator/Sense Amp

ONSEMI

安森美半导体

Transimpedance amplifier 280MHz

DESCRIPTION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. FEATURES • Low noise: 3.5pA/√Hz

Philips

飞利浦

Transimpedance amplifier 280MHz

DESCRIPTION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. FEATURES • Low noise: 3.5pA/√Hz

Philips

飞利浦

GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) · 4-pin super minimold

RENESAS

瑞萨

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

FEATURES • HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • OIP3 = 15 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • 4 PIN SUPER MINI MOLD PACKAGE • GROUNDED EMITT

NEC

瑞萨

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

FEATURES • HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • OIP3 = 15 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • 4 PIN SUPER MINI MOLD PACKAGE • GROUNDED EMITT

NEC

瑞萨

GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) · 4-pin super minimold

RENESAS

瑞萨

High-speed dual-differential comparator/sense amp

FEATURES • 12 ns maximum guaranteed propagation delay • 20 µA maximum input bias current • TTL compatible strobes and outputs • Large common-mode input voltage range • Operates from standard supply voltages APPLICATIONS • MOS memory sense amp • A-to-D conversion • High-speed line receiver

Philips

飞利浦

High-speed dual-differential comparator/sense amp

FEATURES • 12 ns maximum guaranteed propagation delay • 20 µA maximum input bias current • TTL compatible strobes and outputs • Large common-mode input voltage range • Operates from standard supply voltages APPLICATIONS • MOS memory sense amp • A-to-D conversion • High-speed line receiver

Philips

飞利浦

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

RENESAS

瑞萨

L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

文件:41.67 Kbytes Page:7 Pages

NEC

瑞萨

L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

文件:41.67 Kbytes Page:7 Pages

NEC

瑞萨

L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

文件:41.67 Kbytes Page:7 Pages

NEC

瑞萨

High?뭆peed Dual?묭ifferential Comparator/Sense Amp

文件:123.78 Kbytes Page:7 Pages

ONSEMI

安森美半导体

High?뭆peed Dual?묭ifferential Comparator/Sense Amp

文件:123.78 Kbytes Page:7 Pages

ONSEMI

安森美半导体

High?뭆peed Dual?묭ifferential Comparator/Sense Amp

文件:123.78 Kbytes Page:7 Pages

ONSEMI

安森美半导体

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:卷带(TR) 描述:IC COMPARATOR DUAL DIFF 14-SOIC 集成电路(IC) 比较器

ONSEMI

安森美半导体

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC COMPARATOR DUAL DIFF 14-SOIC 集成电路(IC) 比较器

ONSEMI

安森美半导体

High?뭆peed Dual?묭ifferential Comparator/Sense Amp

文件:123.78 Kbytes Page:7 Pages

ONSEMI

安森美半导体

High?뭆peed Dual?묭ifferential Comparator/Sense Amp

文件:123.78 Kbytes Page:7 Pages

ONSEMI

安森美半导体

High?뭆peed Dual?묭ifferential Comparator/Sense Amp

文件:123.78 Kbytes Page:7 Pages

ONSEMI

安森美半导体

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

ETCList of Unclassifed Manufacturers

未分类制造商

Pentium 4 Processors Supporting Hyper-Threading Technology

Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

Intel

英特尔

COAXIAL RESONATOR OSCILLATOR

文件:58.25 Kbytes Page:1 Pages

APITECH

COAXIAL RESONATOR OSCILLATOR

文件:58.06 Kbytes Page:1 Pages

APITECH

MINIATURE FUSEHOLDERS

文件:89.37 Kbytes Page:1 Pages

Littelfuse

力特

NE521产品属性

  • 类型

    描述

  • 型号

    NE521

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    High-speed dual-differential comparator/sense amp

更新时间:2025-11-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
恩XP
2016+
SOP8
3822
只做原装,假一罚十,公司可开17%增值税发票!
PHI
23+
SOP
887
全新原装假一赔十
S
24+
DIP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
PHI
87+
DIP14
1652
全新原装进口自己库存优势
ON
23+
原厂封装
13528
振宏微原装正品,假一罚百
RENESAS/瑞萨
23+
SOT-343
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
PHI
22+
SOP-8
100000
代理渠道/只做原装/可含税
RENESAS/瑞萨
25+
SOT-343
20300
RENESAS/瑞萨原装特价NE52118-T1即刻询购立享优惠#长期有货
PHI
24+
SOP20
20000
全新原厂原装,进口正品现货,正规渠道可含税!!

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