位置：首页 > IC中文资料第5635页 > NE434S01
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE434S01 | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.3 | NEC 瑞萨 |   | |
NE434S01 | C BAND SUPER LOW NOISE HJ FET DESCRIPTION The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE FIGURE: | CEL | | |
NE434S01 | C BAND SUPER LOW NOISE HJ FET 文件：41.16 Kbytes Page：5 Pages | NEC 瑞萨 | | |
NE434S01 | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | RENESAS 瑞萨 | | |
C BAND SUPER LOW NOISE HJ FET DESCRIPTION The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE FIGURE: | CEL | | ||
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.3 | NEC 瑞萨 | | ||
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.3 | NEC 瑞萨 | | ||
C BAND SUPER LOW NOISE HJ FET DESCRIPTION The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE FIGURE: | CEL | | ||
C BAND SUPER LOW NOISE HJ FET 文件：41.16 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
C BAND SUPER LOW NOISE HJ FET 文件：41.16 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
C BAND SUPER LOW NOISE HJ FET 文件：41.16 Kbytes Page：5 Pages | NEC 瑞萨 | |
NE434S01产品属性
- 类型
描述
- 型号
NE434S01
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2450+ |
SMT76 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
NEC |
24+ |
NA/ |
3585 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
24+ |
SMT76 |
880000 |
明嘉莱只做原装正品现货 |
|||
24+ |
500 |
本站现库存 |
|||||
NEC |
24+ |
SMT76 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
PHI |
2447 |
SOP8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC |
20+ |
SMT36 |
49000 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
2005 |
SO86 |
335 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NSC |
04+ |
SOP |
1000 |
原装现货海量库存欢迎咨询 |
|||
NEC |
2023+ |
SMT76 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
NE434S01规格书下载地址
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NE434S01数据表相关新闻
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DdatasheetPDF页码索引
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