型号 功能描述 生产厂家 企业 LOGO 操作
NE434S01-T1B

C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.3

NEC

瑞萨

NE434S01-T1B

C BAND SUPER LOW NOISE HJ FET

DESCRIPTION The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE FIGURE:

CEL

NE434S01-T1B

C BAND SUPER LOW NOISE HJ FET

文件:41.16 Kbytes Page:5 Pages

NEC

瑞萨

C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.3

NEC

瑞萨

C BAND SUPER LOW NOISE HJ FET

DESCRIPTION The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE FIGURE:

CEL

C BAND SUPER LOW NOISE HJ FET

文件:41.16 Kbytes Page:5 Pages

NEC

瑞萨

NE434S01-T1B产品属性

  • 类型

    描述

  • 型号

    NE434S01-T1B

  • 功能描述

    MOSFET S01 LO NO HJ FET S01 LO NO HJ FET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
3585
原装现货,当天可交货,原型号开票
NEC
24+
SMT76
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
NEC
2450+
SMT76
9850
只做原装正品现货或订货假一赔十!
NEC
24+
SMT76
880000
明嘉莱只做原装正品现货
24+
3000
公司存货
PHI
2447
SOP8
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
NEC
20+
SMT36
49000
原装优势主营型号-可开原型号增税票
NEC
2005
SO86
335
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NSC
04+
SOP
1000
原装现货海量库存欢迎咨询
NEC
2023+
SMT76
8800
正品渠道现货 终端可提供BOM表配单。

NE434S01-T1B数据表相关新闻

  • NE5532ADR

    NE5532ADR

    2023-4-14
  • NE5532DRG4 TI/德州仪器 21+ SOP8

    https://hfx03.114ic.com/

    2022-2-19
  • NE5532DR原装热卖库存

    型号: NE5532DR 制造商 Texas Instruments 制造商零件编号 NE5532DR 描述 IC OPAMP GP 2 CIRCUIT 8SOIC 对无铅要求的达标情况/对限制有害物质指令(RoHS)规范的达标情况 无铅/符合限制有害物质指令(RoHS3)规范要求 ?湿气敏感性等级 (MSL) 1(无限) 详细描述 通用-放大

    2021-12-6
  • NE3512S02-T1DNE3512S02-T1C

    NE3512S02-T1C,全新原装当天发货或门市自取0755-82732291. NE3512S02-T1D

    2019-12-17
  • NE3512S02-T1D

    NE3512S02-T1D,全新原装当天发货或门市自取0755-82732291.

    2019-12-17
  • NE3512S02-T1D

    NE3512S02-T1D,全新原装当天发货或门市自取0755-82732291,

    2019-3-22