位置：首页 > IC中文资料第974页 > NE434S01-T1B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE434S01-T1B | CBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE434S01isaHereroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.3 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NE434S01-T1B | CBANDSUPERLOWNOISEHJFET DESCRIPTION TheNE434S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandothercommercialsystems. FEATURES •VERYLOWNOISEFIGURE: | CEL California Eastern Laboratories |  | |
NE434S01-T1B | CBANDSUPERLOWNOISEHJFET 文件：41.16 Kbytes Page：5 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
CBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE434S01isaHereroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.3 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CBANDSUPERLOWNOISEHJFET DESCRIPTION TheNE434S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandothercommercialsystems. FEATURES •VERYLOWNOISEFIGURE: | CEL California Eastern Laboratories | | | |
CBANDSUPERLOWNOISEHJFET 文件：41.16 Kbytes Page：5 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NE434S01-T1B产品属性
- 类型
描述
- 型号
NE434S01-T1B
- 功能描述
MOSFET S01 LO NO HJ FET S01 LO NO HJ FET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2023+ |
SMT76 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
NEC |
24+ |
SMT76 |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
22+ |
MICRO-X |
25000 |
只有原装原装,支持BOM配单 |
|||
NEC |
SO76 |
26000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
NEC |
2020+ |
SMT76 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEC |
2022 |
SO86 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
NEC |
22+ |
SMT76 |
28600 |
只做原装正品现货假一赔十一级代理 |
|||
NEC |
13+ |
MICRO-X |
21000 |
特价热销现货库存 |
|||
NEC |
21+ |
SMT76 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
21+ |
SMT76 |
9866 |
NE434S01-T1B芯片相关品牌
NE434S01-T1B规格书下载地址
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NE434S01-T1B数据表相关新闻
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2019-3-22
DdatasheetPDF页码索引
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