位置：首页 > IC中文资料第974页 > NE4210S01-T1B-A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB T | NEC 瑞萨 |   | ||
SUPER LOW NOISE HJ FET DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n | CEL | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. | RENESAS 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. | RENESAS 瑞萨 | | ||
SUPER LOW NOISE HJ FET DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n | CEL | |
NE4210S01-T1B-A产品属性
- 类型
描述
- 型号
NE4210S01-T1B-A
- 功能描述
MOSFET Super Lo Noise HJFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2021+ |
SMT-86 |
12000 |
||||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS |
18+ |
SMT-86 |
3500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
2023+ |
TO-50 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
NEW |
DO-4 |
18689 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
24+ |
3000 |
公司存货 |
|||||
RENESAS |
25+ |
SMT86 |
5691 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
NEC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
RENESAS/瑞萨 |
24+ |
STM86 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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NE4210S01-T1B-A规格书下载地址
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NE4210S01-T1B-A数据表相关新闻
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2019-3-22
DdatasheetPDF页码索引
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