型号 功能描述 生产厂家 企业 LOGO 操作
NE3513M04

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

NE3513M04

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:228.58 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:239.98 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:228.58 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:239.98 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

封装/外壳:SOT-343F 包装:托盘 描述:FET RF 4V 12GHZ M04 4SMD 分立半导体产品 晶体管 - FET,MOSFET - 射频

CEL

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:239.98 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:228.58 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

封装/外壳:4-SMD,扁平引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:FET RF 4V 12GHZ M04 4SMD 分立半导体产品 晶体管 - FET,MOSFET - 射频

CEL

NE3513M04产品属性

  • 类型

    描述

  • 型号

    NE3513M04

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    IC HJ-FET RF N-CH LNA M04 4SMD

更新时间:2026-1-1 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
13495
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
2016+
PIN4
15000
只做原装,假一罚十,公司可开17%增值税发票!
RENESAS(瑞萨)/IDT
20+
Super-Mini-Mold-4
3000
RENESAS/瑞萨
12+
SOT-343
880000
明嘉莱只做原装正品现货
NEC
24+
SOT343
7800
全新原厂原装正品现货,低价出售,实单可谈
RENESAS/瑞萨
24+
PIN4
43200
郑重承诺只做原装进口现货
RENESAS/瑞萨
24+
PIN4
9600
原装现货,优势供应,支持实单!
RENESAS
18+
4SMD
85600
保证进口原装可开17%增值税发票
RENESAS
NEW
SOT343
580000
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
RENESAS
22+
SOT343
20000
公司只做原装 品质保障

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