型号 功能描述 生产厂家 企业 LOGO 操作
NE3513M04

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

NE3513M04

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:228.58 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:239.98 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:228.58 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:239.98 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

封装/外壳:SOT-343F 包装:托盘 描述:FET RF 4V 12GHZ M04 4SMD 分立半导体产品 晶体管 - FET,MOSFET - 射频

CEL

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:239.98 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:228.58 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

封装/外壳:4-SMD,扁平引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:FET RF 4V 12GHZ M04 4SMD 分立半导体产品 晶体管 - FET,MOSFET - 射频

CEL

NE3513M04产品属性

  • 类型

    描述

  • 型号

    NE3513M04

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    IC HJ-FET RF N-CH LNA M04 4SMD

更新时间:2026-1-2 9:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
23+
SOT343
8160
原厂原装
NEC
24+
SOT343
7800
全新原厂原装正品现货,低价出售,实单可谈
RENESAS/瑞萨
24+
PIN4
30000
只做正品原装现货
RENESAS/瑞萨
24+
SOT343
60000
RENESAS
23+
SOT343
74002
全新原装正品现货,支持订货
RENESAS
25+
SOT343
8800
公司只做原装,详情请咨询
RENESAS
NEW
SOT343
580000
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
RENESAS/瑞萨
24+
PIN4
9600
原装现货,优势供应,支持实单!
RENESAS/瑞萨
22+
SOT343
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
RENESAS/瑞萨
21+
SOT343
10000
原装现货假一罚十

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