型号 功能描述 生产厂家&企业 LOGO 操作
NE3513M04-T2

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:228.58 Kbytes Page:10 Pages

RENESAS

瑞萨

NE3513M04-T2

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:239.98 Kbytes Page:10 Pages

RENESAS

瑞萨

NE3513M04-T2

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

California Eastern Labs

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

California Eastern Labs

封装/外壳:SOT-343F 包装:托盘 描述:FET RF 4V 12GHZ M04 4SMD 分立半导体产品 晶体管 - FET,MOSFET - 射频

CEL

California Eastern Labs

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:239.98 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:228.58 Kbytes Page:10 Pages

RENESAS

瑞萨

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

California Eastern Labs

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

文件:1.27151 Mbytes Page:9 Pages

CEL

California Eastern Labs

封装/外壳:4-SMD,扁平引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:FET RF 4V 12GHZ M04 4SMD 分立半导体产品 晶体管 - FET,MOSFET - 射频

CEL

California Eastern Labs

NE3513M04-T2产品属性

  • 类型

    描述

  • 型号

    NE3513M04-T2

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    SUPER LOW NOISE PSEUDOMORPHIC HJ FET, ROHS COMPLIANT - Tape and Reel

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    IC HJ-FET RF N-CH LNA M04 4SMD

更新时间:2025-8-9 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
13495
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
2016+
PIN4
15000
只做原装,假一罚十,公司可开17%增值税发票!
RENESAS/瑞萨
12+
SOT-343
880000
明嘉莱只做原装正品现货
RENESAS/瑞萨
23+
SOT343
8160
原厂原装
RENESAS
13+
SOT343
14560
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
2450+
SOT-343
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS(瑞萨)/IDT
20+
Super-Mini-Mold-4
3000
RENESAS
23+
SOT343
580000
NEC
24+
SOT343
7800
全新原厂原装正品现货,低价出售,实单可谈
RENESAS/瑞萨
24+
PIN4
43200
郑重承诺只做原装进口现货

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