HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems