位置：首页 > IC中文资料第2638页 > NE350184C-T1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE350184C-T1 | HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems | CEL |   | |
NE350184C-T1 | HETERO JUNCTION FIELD EFFECT TRANSISTOR FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems | RENESAS 瑞萨 | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems | CEL | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems | RENESAS 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems | RENESAS 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems | RENESAS 瑞萨 | |
NE350184C-T1产品属性
- 类型
描述
- 型号
NE350184C-T1
- 功能描述
射频GaAs晶体管 Low Noise HJ FET
- RoHS
否
- 制造商
TriQuint Semiconductor
- 技术类型
pHEMT
- 频率
500 MHz to 3 GHz
- 增益
10 dB
- 噪声系数
正向跨导
- gFS（最大值/最小值）
4 S 漏源电压
- 闸/源击穿电压
- 8 V
- 漏极连续电流
3 A
- 最大工作温度
+ 150 C
- 功率耗散
10 W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
0856+ |
SOT |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
25+ |
SMT36 |
18194 |
RENESAS/瑞萨原装特价NE350184C-T1-A即刻询购立享优惠#长期有货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
NEC |
25+ |
SOP-8 |
18000 |
原厂直接发货进口原装 |
|||
CEL/NEC |
23+ |
SMT36 |
6500 |
只做原装正品现货或订货假一赔十! |
|||
NEC |
09+PBF |
84C |
7 |
原装现货支持BOM配单服务 |
|||
NEC |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
NEC |
09+PBF |
84C |
25 |
现货 |
|||
NEC |
21+ |
SOT-84 |
10000 |
原装现货假一罚十 |
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NE350184C-T1规格书下载地址
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NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引
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