位置：首页 > IC中文资料第2278页 > NE325S01
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE325S01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = | NEC 瑞萨 |   | |
NE325S01 | C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs stringent | CEL | | |
NE325S01 | C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | CEL | | |
NE325S01 | C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：51.88 Kbytes Page：5 Pages | NEC 瑞萨 | | |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs stringent | CEL | | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = | NEC 瑞萨 | | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = | NEC 瑞萨 | | ||
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NECs stringent | CEL | | ||
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：51.88 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：51.88 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：51.88 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
NONLINEAR MODEL 文件：26 Kbytes Page：1 Pages | NEC 瑞萨 | |
NE325S01产品属性
- 类型
描述
- 型号
NE325S01
- 功能描述
射频GaAs晶体管 Super Lo Noise HJFET
- RoHS
否
- 制造商
TriQuint Semiconductor
- 技术类型
pHEMT
- 频率
500 MHz to 3 GHz
- 增益
10 dB
- 噪声系数
正向跨导
- gFS（最大值/最小值）
4 S 漏源电压
- 闸/源击穿电压
- 8 V
- 漏极连续电流
3 A
- 最大工作温度
+ 150 C
- 功率耗散
10 W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
2025+ |
SOT86 |
3685 |
全新原厂原装产品、公司现货销售 |
|||
NEC |
24+ |
SMT |
25000 |
一级专营品牌全新原装热卖 |
|||
NEC |
25+ |
SMD |
860000 |
明嘉莱只做原装正品现货 |
|||
NEC |
04+ |
SO86 |
8175 |
||||
NEC |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
03+ |
SMT86 |
522 |
现货 |
|||
NEC |
21+ |
cross |
10000 |
原装现货假一罚十 |
|||
NEC |
22+ |
SMD |
489 |
只做原装正品 |
NE325S01规格书下载地址
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NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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2019-3-22
DdatasheetPDF页码索引
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