DESCRIPTION

The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications.

NECs stringent quality assurance and test procedures assure the highest reliability and performance.

FEATURES

• SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz

• HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz

• GATE LENGTH: ≤ 0.20 µm

• GATE WIDTH: 200 µm

• LOW COST PLASTIC PACKAGE