位置：首页 > IC中文资料第7587页 > NE32484
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CtoKuBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   | |
ULTRALOWNOISEPSEUDOMORPHICHJFET DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
ULTRALOWNOISEPSEUDOMORPHICHJFET DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ULTRALOWNOISEPSEUDOMORPHICHJFET DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CtoKuBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CtoKuBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ULTRALOWNOISEPSEUDOMORPHICHJFET DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CtoKuBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NE32484产品属性
- 类型
描述
- 型号
NE32484
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
18+ |
原厂原装假一赔十 |
6000 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
|||
NEC |
SMT76 |
68900 |
原包原标签100%进口原装常备现货! |
||||
NEC |
23+ |
20000 |
原厂原装正品现货 |
||||
23+ |
220 |
现货供应 |
|||||
NEC |
24+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
|||
NEC |
23+ |
原厂封装 |
9980 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
NEC |
23+ |
NA/ |
1800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
21+ |
6688 |
十年老店,原装正品 |
||||
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
NEC |
22+ |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
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NE32484规格书下载地址
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NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引
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