位置：首页 > IC中文资料第7587页 > NE32484
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 |   | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush | NEC 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF | RENESAS 瑞萨 | | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush | NEC 瑞萨 | | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush | NEC 瑞萨 | | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF | RENESAS 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF | RENESAS 瑞萨 | | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush | NEC 瑞萨 | | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF | RENESAS 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR | RENESAS 瑞萨 | |
NE32484产品属性
- 类型
描述
- 型号
NE32484
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+ |
2789 |
全新原装自家现货!价格优势! |
|||||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
25+23+ |
29059 |
绝对原装正品现货,全新深圳原装进口现货 |
||||
NEC |
23+ |
26000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
NEC |
24+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
|||
NEC |
2450+ |
SMT76 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
NEC |
25+ |
15 |
公司优势库存 热卖中! |
||||
NEC |
25+ |
SOP-8 |
18000 |
原厂直接发货进口原装 |
|||
NEC |
24+ |
NA |
5000 |
全新原装正品,现货销售 |
|||
NEC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
NE32484芯片相关品牌
NE32484规格书下载地址
NE32484参数引脚图相关
- p800
- p600
- otl功率放大器
- opa642
- opa2604
- op37
- op07中文资料
- op07
- OLED显示屏
- oled发光材料
- OLED材料
- ogs
- OEM
- nvidia
- ntc热敏电阻
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- NE5019F
- NE5019D
- NE5019
- NE5018
- NE5008
- NE46234
- NE46134
- NE46100
- NE4558N
- NE4558D
- NE4558
- NE416
- NE41137
- NE38018
- NE34018
- NE33284
- NE33200
- NE32900
- NE325S01-T1
- NE325S01_02
- NE325S01
- NE32584C-T1A-A
- NE32584C-T1A
- NE32584C-T1
- NE32584C-SL
- NE32584C-S
- NE32584C_98
- NE32584C
- NE32584
- NE32500N
- NE32500M
- NE32500
- NE32484A-T1A
- NE32484A-T1
- NE32484A-SL
- NE32484AS
- NE32484A_98
- NE32484A
- NE32400_98
- NE32400
- NE32155055
- NE32155054
- NE32155053
- NE32155052
- NE3210S01-T1B-A
- NE3210S01-T1B
- NE3210S01-T1-A
- NE3210S01-T1
- NE3210S01-A
- NE3210S01
- NE321000_01
- NE32084
- NE32083A
- NE32060945
- NE32060645
- NE32060633
- NE32060333
- NE32060245
- NE32000
- NE27200
- NE25339
- NE25337
- NE25139
- NE25137
- NE25118
- NE24200
- NE23383
- NE23300
- NE230
- NE22120
- NE22100
- NE21987
- NE21937
- NE21935
- NE21912
- NE21908
NE32484数据表相关新闻
NDVVYR-0001电缆组件
Amphenol CS 的电缆组件具有集成散热器和气流通道
2024-5-4NDUL03N150CG
NDUL03N150CG
2023-9-26NDTS0505C
NDTS0505C
2021-8-23NE3512S02-T1C-A
NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
2019-12-17NE3512
NE3512，全新原装当天发货或门市自取0755-82732291，
2019-3-22NE3512S02-T1D
NE3512S02-T1D，全新原装当天发货或门市自取0755-82732291，
2019-3-22
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
