位置：首页 > IC中文资料第7587页 > NE32484A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE32484A | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 |   | |
NE32484A | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush | NEC 瑞萨 | | |
NE32484A | HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF | RENESAS 瑞萨 | | |
NE32484A | HETERO JUNCTION FIELD EFFECT TRANSISTOR | RENESAS 瑞萨 | | |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush | NEC 瑞萨 | | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush | NEC 瑞萨 | | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF | RENESAS 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF | RENESAS 瑞萨 | | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush | NEC 瑞萨 | | ||
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
丝印代码：T；HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF | RENESAS 瑞萨 | |
NE32484A产品属性
- 类型
描述
- 型号
NE32484A
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
20+ |
SMT36 |
4 |
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24+ |
20000 |
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NEC |
20+ |
SMT76 |
49000 |
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NEC |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
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NEC |
2450+ |
SOT86 |
6540 |
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NEC |
2023+ |
十字架 |
50000 |
原装现货 |
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NEC |
25+23+ |
29059 |
绝对原装正品现货,全新深圳原装进口现货 |
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NEC |
24+ |
SMT84 |
246 |
现货供应 |
|||
NEC |
22+ |
SMT-76 |
3000 |
原装正品,支持实单 |
|||
NEC |
19+ |
20000 |
870 |
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NE32484A规格书下载地址
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NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引
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