C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mush

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

丝印代码：T；HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

文件：85.87 Kbytes Page：8 Pages

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

文件：55.93 Kbytes Page：5 Pages

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

文件：55.93 Kbytes Page：5 Pages

HETERO JUNCTION FIELD EFFECT TRANSISTOR

Socket terminal strip Screw connection

The socket terminal strip 324 is available in 11,5 mm pitch with 1- to 12-pole design and can be easily stripped to the desired number of poles. One fixing hole is located between every two poles. The flexible polyamide moulding can even be mounted on curved surfaces. The wire protector of the

PGA ZIF Test & Burn-in Socket for Any Footprint on Std 8x8 to 21x21 Grid

FEATURES • Strong Metal Cam Activates Normally-closed Contacts, Preventing Dependency on Plastic for Contact Force • Handle mounted on Right- or Left-hand Side • Any Footprint Accepted on Standard 13x13 to 21x21 Grid GENERAL SPECIFICATIONS • SOCKET BODY: black UL 94V-0 Polyphenylene Sulfid

T-1 Subminiature Lamps

T-1¼ Subminiature Lamps

Q-G짰 CONNECTOR-ADAPTERS

Q-G® CONNECTOR-ADAPTERS

320 Series True-rms Clamp Meters

文件：1.42564 Mbytes Page：2 Pages