NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

NPN SILICON HI FREQUNCY TRANSISTOR

DESCRIPTION: The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE: • High frequency 8.0 GH • Low noise, 1 dB at 0.5 GHz.

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

NPN SILICON HI FREQUNCY TRANSISTOR

Surface mount DIP Switch-Auto Placeable

Features Optimized Mechanical Features • Removable tape seal to withstand IR vapor phase or wave soldering temperatures, board washing • Positive detent separate from contactor • Low profile and medium height actuators available • SPST configurations, 2 through 10 and 12 positions • .686mm (

Mini 7/8 Male 3 Pin Field Attachable

Mini 7/8 Male 3 Pin Field Attachable

This specification covers the requirements for product performance, test methods and quality assurance provisions of 219 SERIES

Performance and Descriptions: The product is designed to meet the electrical, mechanical and environmental performance requirements specification. Unless otherwise specified, all tests are performed at ambient environmental conditions.

Plugs IP 44 and IP 67

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FUSE HOLDER SELECTION GUIDE

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