NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

NPN SILICON HI FREQUNCY TRANSISTOR

DESCRIPTION: The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE: • High frequency 8.0 GH • Low noise, 1 dB at 0.5 GHz.

NPN SILICON HI FREQUNCY TRANSISTOR

NPN SILICON HI FREQUNCY TRANSISTOR

DESCRIPTION: The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE: • High frequency 8.0 GH • Low noise, 1 dB at 0.5 GHz.