Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. Features ■ 2.0A, 50V. RDS(ON) = 0.3Ω @ VGS = 10V ■ High density cell design for extremely low RDS(ON). ■ High power and curre

Dual N-Channel Enhancement Mode Field Effect Transistor

Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested

4 Channel 500MSPS DDS with 10-bit DACs

PRODUCT OVERVIEW The AD9959 consists of four independently programmable DDS channels. The AD9959 features independent frequency, phase, and amplitude control of each channel; this allows for the correction of imbalances due to analog processing such as filtering, amplification, or PCB layout re

Single and dual PMOS high-side H-bridge

文件：828.96 Kbytes Page：49 Pages

Single and dual PMOS high-side H-bridge

文件：1.30458 Mbytes Page：43 Pages

Single and dual PMOS high-side H-bridge

文件：1.30458 Mbytes Page：43 Pages