Single and dual PMOS high-side H-bridge

Features  Full path RDSON less than 540 mΩ  Continuous load current > 3 A  Operating battery supply voltage 5 V to 28 V  Operating VDD supply voltage 4.5 V to 5.5 V  All ECU internal pins can withstand up to 18 V  Output switching frequency up to 11 kHz  Monitoring of VDD supply volt

单/双路PMOS高侧H桥

Single and dual PMOS high-side H-bridge

文件：828.96 Kbytes Page：49 Pages

Single and dual PMOS high-side H-bridge

Features  Full path RDSON less than 540 mΩ  Continuous load current > 3 A  Operating battery supply voltage 5 V to 28 V  Operating VDD supply voltage 4.5 V to 5.5 V  All ECU internal pins can withstand up to 18 V  Output switching frequency up to 11 kHz  Monitoring of VDD supply volt

Single and dual PMOS high-side H-bridge

Features  Full path RDSON less than 540 mΩ  Continuous load current > 3 A  Operating battery supply voltage 5 V to 28 V  Operating VDD supply voltage 4.5 V to 5.5 V  All ECU internal pins can withstand up to 18 V  Output switching frequency up to 11 kHz  Monitoring of VDD supply volt

Single and dual PMOS high-side H-bridge

Features  Full path RDSON less than 540 mΩ  Continuous load current > 3 A  Operating battery supply voltage 5 V to 28 V  Operating VDD supply voltage 4.5 V to 5.5 V  All ECU internal pins can withstand up to 18 V  Output switching frequency up to 11 kHz  Monitoring of VDD supply volt

Single and dual PMOS high-side H-bridge

Features  Full path RDSON less than 540 mΩ  Continuous load current > 3 A  Operating battery supply voltage 5 V to 28 V  Operating VDD supply voltage 4.5 V to 5.5 V  All ECU internal pins can withstand up to 18 V  Output switching frequency up to 11 kHz  Monitoring of VDD supply volt

Single and dual PMOS high-side H-bridge

文件：1.30458 Mbytes Page：43 Pages

Single and dual PMOS high-side H-bridge

文件：1.30458 Mbytes Page：43 Pages

Single and dual PMOS high-side H-bridge

文件：828.96 Kbytes Page：49 Pages

Single and dual PMOS high-side H-bridge

文件：1.30458 Mbytes Page：43 Pages

Single and dual PMOS high-side H-bridge

文件：1.30458 Mbytes Page：43 Pages

Single and dual PMOS high-side H-bridge

文件：828.96 Kbytes Page：49 Pages

封装/外壳：36-전력FSOP（0.295"，7.50mm 宽） 包装：卷带（TR） 描述：IC H-BRIDGE HIGH SIDE 36PSSOP 集成电路（IC） 全半桥驱动器

封装/外壳：36-전력FSOP（0.295"，7.50mm 宽） 包装：卷带（TR） 描述：POWERSSO36 集成电路（IC） 全半桥驱动器

Single and dual PMOS high-side H-bridge

文件：828.96 Kbytes Page：49 Pages

4 Channel 500MSPS DDS with 10-bit DACs

PRODUCT OVERVIEW The AD9959 consists of four independently programmable DDS channels. The AD9959 features independent frequency, phase, and amplitude control of each channel; this allows for the correction of imbalances due to analog processing such as filtering, amplification, or PCB layout re

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. Features ■ 2.0A, 50V. RDS(ON) = 0.3Ω @ VGS = 10V ■ High density cell design for extremely low RDS(ON). ■ High power and curre