丝印代码：NDS9948；Dual 60V P-Channel PowerTrench??MOSFET

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双 P 沟道，PowerTrench® MOSFET，60V，-2.3A，250mΩ

此P沟道MOSFET是采用飞兆半导体先进的PowerTrench工艺生产的稳固栅极版本。 已针对要求大范围栅极驱动电压额定值(4.5V-20V)的功率管理应用进行了优化。 •-2.3A，-60V\n•RDS(ON) = 250 mΩ @ VGS = -10V\n•RDS(ON) = 500 mΩ @ VGS = -4.5V\n•低栅极电荷（典型值9 nC）。\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –2.3 A, –60 V RDS(ON)= 250 mΩ@ VGS

Dual 60V P-Channel PowerTrench MOSFET

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Dual P-Channel 6 0-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

Dual 60V P-Channel PowerTrench MOSFET

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Dual 60V P-Channel PowerTrench??MOSFET

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1/5 Optical Size CCIR B/W Solid-State Image Sensor

Overview The LC9948G is a 1/5 optical size frame transfer type CCD (charge-coupled device) solid-state image sensor developed for use in B/W video cameras. Features • Effective number of pixels (total pixels): 499 H × 582 V (532 H × 600 V) • Number of optical black pixels: Horizontal dire

3.3V, 160-MHz, 1:12 Clock Distribution Buffer

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3.3V, 160-MHz, 1:12 Clock Distribution Buffer

文件：100.41 Kbytes Page：6 Pages

Dual P-Channel 60-V (D-S), 175C MOSFET

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